INTRODUCTION: NANOSTRUCTURES OF SEMICONDUCTING MATERIALS ARE CURRENTLY ATTRACTING A LOT OF INTEREST AS THEY ARE EXPECTED TO PLAY AN IMPORTANT ROLE IN THE DEVELOPMENT OF FUTURE NANOSCALE TECHNOLOGIES. MANY APPLICATIONS OF SEMICONDUCTOR NANOMATERIALS TO NANODEVICES HAVE BEEN DEMONSTRATED, SUCH AS NANOWIRE DIODES [1]. ALUMINUM NITRIDE (ALN) HAS BEEN INVESTIGATED EXTENSIVELY AS AN IMPORTANT CERAMIC MATERIAL FOR THE APPLICATIONS AS ELECTRICAL SUBSTRATES AND PACKAGING MATERIALS DUE TO ITS HIGHEST BAND GAP (6.2 EV), EXCELLENT THERMAL CONDUCTIVITY (0.823-2.0WCM-1 K-1), GOOD ELECTRICAL RESISTANCE, LOW DIELECTRIC LOSS, HIGH PIEZOELECTRIC RESPONSE, AND IDEAL THERMAL EXPANSION ( ~4×10-6 K-1) SIMILAR TO THAT OF SILICON (SI) [2, 3]. TO DATE, ONE-DIMENSIONAL (1D) ALN NANOSTRUCTURES, SUCH AS NANOWIRES, NANOTUBES, NEOCONS, NANOTIPS, NANOBELTS, NANORODS WITH CONTROLLED HIGH ASPECT RATIO, SHAPES AND SIZES, HAVE BEEN INVESTIGATED [4, 5]. EQUILIBRIUM GEOMETRIES, STABILITIES, AND ELECTRONIC PROPERTIES OF NITROSAMINE (NH2NO) MOLECULE ADSORPTION ON THE EXTERIOR SURFACE OF SINGLE-WALLED ALUMINUM NITRIDE NANOTUBES (ALNNTS) CALCULATED.