Search Results/Filters    

Filters

Year

Banks



Expert Group







Full-Text


Author(s): 

AMADEH A.

Issue Info: 
  • Year: 

    2005
  • Volume: 

    -
  • Issue: 

    18
  • Pages: 

    59-66
Measures: 
  • Citations: 

    0
  • Views: 

    1167
  • Downloads: 

    0
Abstract: 

The wettability of AIN, AIN-BN and A12O3 by molten steel has been studied using sessile drop method. All of the substrates presented non -wetting behaviour after one hour contact with the liquid alloy at 1550°C. The evaluation of liquid-vapour and solid-liquid tensions and the values of adhesion work showed that wetting is governed by chemical interactions at solid -liquid and liquid vapour interfaces. Addition of BN to AIN substrate on one hand reduces its densification rate and on the other hand modifies its wettabilty by molten steel.

Yearly Impact: مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 1167

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesCitation 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesRefrence 0
Issue Info: 
  • Year: 

    1388
  • Volume: 

    7
Measures: 
  • Views: 

    293
  • Downloads: 

    0
Abstract: 

در این پژوهش، رفتار سینتیکی اکسیداسیون ایزوترم پودر AlN در دماهای 1050، 1100 و 1150 درجه سانتیگراد به وسیله ترموگراویمتری بررسی شد. برای بیان تغییرات وزنی محصولات واکنش، از کسر واکنش ( x) بر حسب زمان اکسیداسیون، استفاده شد. مدل جدیدی برای سینتیک اکسیداسیون ایزوترم پودر AlN ارایه شد. بر اساس این مدل تغییرات انرژی اکتیواسیون ظاهری معادل kJ mol 280-1 حاصل شد.

Yearly Impact:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 293

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 0
Journal: 

BIOINFORMATICS

Issue Info: 
  • Year: 

    1999
  • Volume: 

    15
  • Issue: 

    5
  • Pages: 

    382-390
Measures: 
  • Citations: 

    1
  • Views: 

    172
  • Downloads: 

    0
Keywords: 
Abstract: 

Yearly Impact: مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 172

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesCitation 1 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesRefrence 0
Issue Info: 
  • Year: 

    2013
  • Volume: 

    16
Measures: 
  • Views: 

    140
  • Downloads: 

    80
Abstract: 

INTRODUCTION: INTERACTION OF GAS MOLECULES WITH THE SURFACE OF NANOTUBES HAS BEEN INTENSIVELY INVESTIGATED IN THE PAST DECADE DUE TO ITS TECHNICAL IMPORTANCE AND FUNDAMENTAL INTEREST.ALN NANOTUBES (ALNNTS) ARE WIDE BAND GAP SEMICONDUCTORS, EXHIBITING GOOD DIELECTRIC PROPERTIES, WITH HIGH THERMAL CONDUCTIVITY, AND LOW THERMAL EXPANSION COEFFICIENT. AN ATTRACTIVE POINT IS THAT ALNNTS HAVE HIGHER REACTIVITY THAN CNTS OR BNNTS DUE TO THEIR GREAT POLARITY [1].

Yearly Impact:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 140

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 80
Issue Info: 
  • Year: 

    2008
  • Volume: 

    8
  • Issue: 

    1
  • Pages: 

    1-7
Measures: 
  • Citations: 

    0
  • Views: 

    930
  • Downloads: 

    0
Abstract: 

We have grown TiO2 and AlN under ultra high vacuum and high pressure conditions and studied their structures with using AES and SEM techniques. The obtained results show that an amorphous film of TiO2 and AlN could be formed on silicon substrate. Furthermore, TiO2 and AlN are high– K dielectric materials and they can thus be replaced to ultra thin gate oxide film.

Yearly Impact: مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 930

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesCitation 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesRefrence 0
Issue Info: 
  • Year: 

    2013
  • Volume: 

    16
Measures: 
  • Views: 

    123
  • Downloads: 

    93
Abstract: 

INTRODUCTION: NANOSTRUCTURES OF SEMICONDUCTING MATERIALS ARE CURRENTLY ATTRACTING A LOT OF INTEREST AS THEY ARE EXPECTED TO PLAY AN IMPORTANT ROLE IN THE DEVELOPMENT OF FUTURE NANOSCALE TECHNOLOGIES. MANY APPLICATIONS OF SEMICONDUCTOR NANOMATERIALS TO NANODEVICES HAVE BEEN DEMONSTRATED, SUCH AS NANOWIRE DIODES [1]. ALUMINUM NITRIDE (ALN) HAS BEEN INVESTIGATED EXTENSIVELY AS AN IMPORTANT CERAMIC MATERIAL FOR THE APPLICATIONS AS ELECTRICAL SUBSTRATES AND PACKAGING MATERIALS DUE TO ITS HIGHEST BAND GAP (6.2 EV), EXCELLENT THERMAL CONDUCTIVITY (0.823-2.0WCM-1 K-1), GOOD ELECTRICAL RESISTANCE, LOW DIELECTRIC LOSS, HIGH PIEZOELECTRIC RESPONSE, AND IDEAL THERMAL EXPANSION ( ~4×10-6 K-1) SIMILAR TO THAT OF SILICON (SI) [2, 3]. TO DATE, ONE-DIMENSIONAL (1D) ALN NANOSTRUCTURES, SUCH AS NANOWIRES, NANOTUBES, NEOCONS, NANOTIPS, NANOBELTS, NANORODS WITH CONTROLLED HIGH ASPECT RATIO, SHAPES AND SIZES, HAVE BEEN INVESTIGATED [4, 5]. EQUILIBRIUM GEOMETRIES, STABILITIES, AND ELECTRONIC PROPERTIES OF NITROSAMINE (NH2NO) MOLECULE ADSORPTION ON THE EXTERIOR SURFACE OF SINGLE-WALLED ALUMINUM NITRIDE NANOTUBES (ALNNTS) CALCULATED.

Yearly Impact:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 123

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 93
Issue Info: 
  • Year: 

    2019
  • Volume: 

    5
  • Issue: 

    1
  • Pages: 

    36-40
Measures: 
  • Citations: 

    0
  • Views: 

    221
  • Downloads: 

    175
Abstract: 

In this research study, the effects of aluminum nitride (AlN) additive on the densification behavior and microstructure development of titanium diboride (TiB2) based ceramic matrix composite were investigated. In this way, a monolithic TiB2 ceramic and a TiB2– 5 wt% AlN ultrahigh temperature ceramic composite were fabricated by spark plasma sintering (SPS) process at a temperature of 1900 ° C for a dwell time of 7 min under an externally applied pressure of 40 MPa in vacuum conditions. The relative density measurements were carried out using the Archimedes principles for evaluation of bulk density and rule of mixtures for calculation of theoretical one. Compared to the additivefree monolithic TiB2 ceramic sample with a relative density of ~96%, the addition of AlN as a sintering aid greatly improved the sinterability of TiB2 matrix composite so that a near fully dense sample with a relative density of ~100% were obtained by the spark plasma sintering process. The removal of harmful oxide impurities of titania (TiO2) and boria (B2O3) from the surfaces of starting TiB2 powder particles and in-situ formation of new phases such as aluminum diboride (AlB2) and Al2Ti as an intermetallic compound of aluminum and titanium, not only improved the sinterability of the composite ceramic, but also significantly prevented the extreme growth of TiB2 grains.

Yearly Impact: مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 221

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 175 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesCitation 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesRefrence 0
Author(s): 

GHASEMZADEH F. | KANJOURI F.

Issue Info: 
  • Year: 

    2019
  • Volume: 

    15
  • Issue: 

    1
  • Pages: 

    21-26
Measures: 
  • Citations: 

    0
  • Views: 

    146
  • Downloads: 

    76
Abstract: 

We have investigated the electronic and optical properties of AlN hexagonal nanosheets under different kinds of strains, using the band structure results obtained through the full potential linearized augmented plane wave method within the density functional theory. The results show that 10% uniaxial strain along the zig-zag direction induces an indirect to direct band-gap transition. The dielectric tensor and corresponding optical properties are derived within the random phase approximation. Specifically, the dielectric function, reflectivity and refractive index of AlN nanosheets are calculated for both parallel ( ) and perpendicular ( ) electric field polarizations.

Yearly Impact: مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 146

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 76 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesCitation 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesRefrence 0
Issue Info: 
  • Year: 

    2013
  • Volume: 

    16
Measures: 
  • Views: 

    106
  • Downloads: 

    81
Abstract: 

INTRODUCTION: AFTER THE DISCOVERY OF CARBON NANOTUBES, THERE HAS BEEN MANY EFFORTS FOR THE SYNTHESIS OF DIFFERENT TYPES OF NANOTUBES WERE CALLED NON-CARBON NANOTUBES [1, 2]. DFT CALCULATIONS SHOW THAT NANOTUBES OF ALUMINUM NITRIDE, PACKAGING COSTS AND ENERGY PREDICTED FOR MADE THE SINGLE-LAYER NANOTUBES FROM SHEET OF ALUMINUM NITRIDE GRAPHITE ARE LESS THAN THE AMOUNT REQUIRED FOR THE FORMATION OF BORON NITRIDE NANOTUBES, AND CARBON NANOTUBES [3]. AMONG THE NANOSTRUCTURES, ALUMINUM NITRIDE WITH WIDE BAND GAP, HIGH PROVIDING THERMAL STABILITY, THERMAL CONDUCTIVITY REMARKABLE, LOW THERMAL EXPANSION AND HIGH RESISTANCE TO CHEMICALS AND GASES AND IN SEMICONDUCTOR PROCESSING DUE TO DIELECTRIC PROPERTIES HAVE BEEN STUDIED [4]. IN THE PRESENT WORK, OUR MAIN OBJECTIVE IS TO COMPARE THE CH3NH2 ADSORPTION BEHAVIOR OF TWO PRISTINE NANOTUBES INCLUDING: ALN AND P-DOPED ALN NANOTUBES IN AN IDENTICAL MOLECULAR LEVEL OF THEORY.

Yearly Impact:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 106

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 81
Issue Info: 
  • Year: 

    2015
  • Volume: 

    5
  • Issue: 

    2
  • Pages: 

    213-217
Measures: 
  • Citations: 

    1
  • Views: 

    352
  • Downloads: 

    144
Abstract: 

The adsorption behavior of ethyl acetylene (C4H6) molecule with external surface of (5, 0), zigzag aluminum nitride nanotube (AlNNT) was studied using density functional calculation, and it was found that the adsorption energy (Ead) of ethyl acetylene on the surface of pristine nanotubes is about-10.85 kcal/mol. However, when nanotubes have been doped with a P atom, the adsorption energy of ethyl acetylene molecule was decreased.Calculation showed when the nanotube is doped by P atom, the adsorption energy range is about-8.05 to -10.64 kcal/mol, and the amount of HOMO/LUMO energy gap (Eg) will reduce significantly. Pristine AlNNT is a suitable adsorbent for ethyl acetylene and can be used in separation processes or adsorption of ethyl acetylene toxic gas from environmental systems. Also the AlNNT doped by P in the presence of ethyl acetylene, an electrical signal is generated directly and therefore can potentially be used for ethyl acetylene toxic gas sensors for detection in environmental systems.

Yearly Impact: مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View 352

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesDownload 144 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesCitation 1 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic ResourcesRefrence 0
litScript
telegram sharing button
whatsapp sharing button
linkedin sharing button
twitter sharing button
email sharing button
email sharing button
email sharing button
sharethis sharing button