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Issue Info: 
  • Year: 

    2008
  • Volume: 

    3
Measures: 
  • Views: 

    161
  • Downloads: 

    0
Abstract: 

RESISTIVITY MEASUREMENTS OF SILICON WAFERS (111) N AND P TYPE WERE PERFORMED BY USING THE VAN DER PAUW TECHNIQUE. THEN THIN FILM OF SILICON WAS DEPOSITED ON SILICON WAFER BY ELECTRON BEAM EVAPORATION. CURVES OF SILICON WAFER IN COMPARISON WITH DEPOSITED SILICON SHOWS THAT FOR CURRENTS LESS THAN 1MA THERE IS A CLEAR DIFFERENT BETWEEN THESE CURVES WHICH IS DUE TO SILICON THIN FILM.

Yearly Impact:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Author(s): 

GHORBANI S.R.

Issue Info: 
  • Year: 

    2006
  • Volume: 

    6
  • Issue: 

    3
  • Pages: 

    202-202
Measures: 
  • Citations: 

    0
  • Views: 

    806
  • Downloads: 

    0
Abstract: 

Polycrystalline samples of NdBa2-xLaxCu3O7-3 with x=0, 0.05, 0.10, 0.15, 0.20, and 0.30 were made by standard solid state methods. The transport and superconducting properties have been studied by the  resistivity measurements as a function of temperature and doping concentration. In order to measurements the hole concentration in CuO2 planes, the room temperature thermoelectric power was measured as a function of La doping. The resistance and the room temperature thermoelectric power were increased while the critical temperature was decreased as parabolic-like by increasing doping concentration. The pseudogap temperature (or pseudogap energy) was measured from downturn deviation in a linear dependence of resistance as a function of temperature. The critical temperature, room temperature thermoelectric power S(290 K), resitivity, and pseudogap temperature results were suggested that hole filling was the main reason of suppression of superconductivity in this alloys.

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Author(s): 

GHORBANI S.R. | YAZDIZADEH R.

Issue Info: 
  • Year: 

    2012
  • Volume: 

    12
  • Issue: 

    3
  • Pages: 

    253-259
Measures: 
  • Citations: 

    0
  • Views: 

    856
  • Downloads: 

    0
Abstract: 

Polycrystalline samples of Nd1-xPrxBa2Cu3O7-d with 0£x£0.30 were made by standard solid state methods. The transport and superconducting properties were studied by the resistivity and the thermoelectric power measurements as a function of temperature and doping concentration. The resistance and the thermoelectric power were increased by increasing doping concentration. The pseudogap temperature was measured from downturn deviation in a linear dependence of resistance as a function of temperature. The resitivity, the thermoelectric power, the critical temperature, and the pseudogap temperature results suggested that the hole concentration in CuO2 planes was decreased by increasing Pr doping concentration. The resistivity and the thermoelectric power results were analyzed by the bipolaron and the phenomenological narrow band model, respectively. A good agreement between models and data was obtained. On the basis of these models, it was inferred that the localization tendency is one of the main reasons for decreasing the hole concentration in the CuO2 plane, which results in the strong depression of the superconductivity.

Yearly Impact: مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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