INVESTIGATION OF SILICON ANISOTROPIC ETCHING IN TMAH SOLUTION

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

ABDOLLAHI HASAN; HAJGHASSEM HASSAN

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: Journal of Advanced Processes in Materials Engineering Year:2015 | Volume:9 | Issue:3 (34) Page(s): 133-144

Download Full-Text

Persian Verion

View:

782

Download:

Cites:

Information Journal Paper

Title

INVESTIGATION OF SILICON ANISOTROPIC ETCHING IN TMAH SOLUTION

Author(s)

ABDOLLAHI HASAN | HAJGHASSEM HASSAN | Issue Writer Certificate

Keywords

ANISOTROPIC ETCHINGQ2

SILICON MICROMACHININGQ2

SURFACE ROUGHNESSQ2

TMAHQ2

Abstract

in this-article, behavioral analysis of Silicon ANISOTROPIC ETCHING in Tetramethyl Ammonium Hydroxide (TMAH) water solution is investigated. Therefore, silicon Etching process is performed with different concentration of 5, 10, 15 and 25 wt. %, and in the various temperatures of70, 80 and 90°C. Measured results show that the etching rate intensifies by increasing the solution temperature, but it decreases with increasing in TMAH concentration greater than 10 wt. %. a maximum etching rate on the p-type Si (100) surface; reaches a value of 6211m1h at a solution temperature of 90oC and TMAH concentration of 10 wt. %. SEM images show that the silicon surface lumps appear like small pyramid-shaped hillocks in which form and distribution on silicon surface is completely random The SURFACE ROUGHNESS increases with decreasing of TMAH concentration and much smoother silicon surface can be observed for higher concentration. Moreover, the maximum <100>/<111> etch rate ratio is 10.6 obtained in 10 wt. %TMAH. This concentration of TMAH has the minimum undercut.

Cites

No record.

References

No record.

Cite

APA: Copy

ABDOLLAHI, HASAN, & HAJGHASSEM, HASSAN. (2015). INVESTIGATION OF SILICON ANISOTROPIC ETCHING IN TMAH SOLUTION. ADVANCED PROCESSES IN MATERIALS, 9(3 (34)), 133-144. SID. https://sid.ir/paper/172610/en

Vancouver: Copy

ABDOLLAHI HASAN, HAJGHASSEM HASSAN. INVESTIGATION OF SILICON ANISOTROPIC ETCHING IN TMAH SOLUTION. ADVANCED PROCESSES IN MATERIALS[Internet]. 2015;9(3 (34)):133-144. Available from: https://sid.ir/paper/172610/en

IEEE: Copy

HASAN ABDOLLAHI, and HASSAN HAJGHASSEM, “INVESTIGATION OF SILICON ANISOTROPIC ETCHING IN TMAH SOLUTION,” ADVANCED PROCESSES IN MATERIALS, vol. 9, no. 3 (34), pp. 133–144, 2015, [Online]. Available: https://sid.ir/paper/172610/en

Related Journal Papers