Optimum Design of a Microwave Low-Noise Amplifier by Means of Least Mean Square Error (LMS) Technique in S Frequency Band

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Ostadzadeh Saeed Reza; Feyzi Sina

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Journal Paper

Paper Information

Journal: Computational Sciences and Engineering Year:2024 | Volume:4 | Issue:1 Page(s): 125-134

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Title

Optimum Design of a Microwave Low-Noise Amplifier by Means of Least Mean Square Error (LMS) Technique in S Frequency Band

Author(s)

Ostadzadeh Saeed Reza | Feyzi Sina | Issue Writer Certificate

Keywords

LNA

Optimization

Power gain

Noise figure

Broadband

Abstract

In this paper a low noise amplifier (LNA) in the frequency interval of [3-5] GHz is designed and optimized. The design process consists of three parts. At first, the stability of the bipolar junction transistor (BJT) is investigated. Simulation results show that it is unconditionally stable in the whole frequency interval. In the second part, the input and output matching networks are constructed in such a way that the desired transducer Power gain (GT=10dB) and possible minimum Noise figure (Fn) are achieved simultaneously. In order to achieve approximately constant GT and Fn in the desired frequency interval, the input and output matching networks are finally optimized using least mean square error technique. Once the Optimization process is converged, variations of GT and Fn in the whole frequency interval are respectively less than 1dB and 0.5 dB. Besides, the variation of output phase is approximately linear.

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