TEMPERATURE EFFECT INVESTIGATION OF 45NM SILICON-ON-DIAMOND MOSFET TRANSISTORS

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DAGHIGHI ARASH; FARAJZADEH A.

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Paper Information

Journal: Majlesi Journal of Electrical Engineering Year:2009 | Volume:3 | Issue:1 (8) Page(s): 27-32

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Information Journal Paper

Title

TEMPERATURE EFFECT INVESTIGATION OF 45NM SILICON-ON-DIAMOND MOSFET TRANSISTORS

Author(s)

DAGHIGHI ARASH | FARAJZADEH A. | Issue Writer Certificate

Keywords

SILICON ON INSULATOR MOSFETQ3

BODY CONTACTQ3

BODY RESISTANCEQ3

OUTPUT CONDUCTANCEQ3

SELF-HEATING EFFECTSQ3

Abstract

The SELF-HEATING EFFECTS (SHE) in 45nm Silicon-on-Insulator (SOI) and Silicon-on-Diamond (SOD) structures were investigated. As a result of high thermal conductivity of diamond, SHE is much less pronounced in SOD structures. This makes SOD transistors suitable for high power applications were large power density is required. It was shown that in SOD substrate the generated heat in active transistors not only spreads away in the substrate but also transfers to the auxiliary non-active transistors on the same die through the diamond film. Our hydrodynamic simulation results showed 8 times more off-current in auxiliary transistors than SOI substrate. The thermal coupling between the neighboring devices in SOD structures represent device miss-match in analog circuits were high degree of matching is required.

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References

SOI TECHNOLOGY FOR THE GHZ ERA

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APA: Copy

DAGHIGHI, ARASH, & FARAJZADEH, A.. (2009). TEMPERATURE EFFECT INVESTIGATION OF 45NM SILICON-ON-DIAMOND MOSFET TRANSISTORS. MAJLESI JOURNAL OF ELECTRICAL ENGINEERING, 3(1 (8)), 27-32. SID. https://sid.ir/paper/188208/en

Vancouver: Copy

DAGHIGHI ARASH, FARAJZADEH A.. TEMPERATURE EFFECT INVESTIGATION OF 45NM SILICON-ON-DIAMOND MOSFET TRANSISTORS. MAJLESI JOURNAL OF ELECTRICAL ENGINEERING[Internet]. 2009;3(1 (8)):27-32. Available from: https://sid.ir/paper/188208/en

IEEE: Copy

ARASH DAGHIGHI, and A. FARAJZADEH, “TEMPERATURE EFFECT INVESTIGATION OF 45NM SILICON-ON-DIAMOND MOSFET TRANSISTORS,” MAJLESI JOURNAL OF ELECTRICAL ENGINEERING, vol. 3, no. 1 (8), pp. 27–32, 2009, [Online]. Available: https://sid.ir/paper/188208/en

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