NANO ORGANIC TRANSISTOR WITH SIO2 / POLY VINYLPYRROLIDONE DIELECTRIC

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HASHEMIZADEH S.A.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Journal: JOURNAL OF NANOSTRUCTURES Year:2016 | Volume:6 | Issue:1 Page(s): 17-22

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Information Journal Paper

Title

NANO ORGANIC TRANSISTOR WITH SIO2 / POLY VINYLPYRROLIDONE DIELECTRIC

Author(s)

HASHEMIZADEH S.A. | Issue Writer Certificate

Keywords

NANO ORGANIC TRANSISTORSQ2

OXIDE SILICONQ1

POLY VINYL PYRROLIDONEQ2

Abstract

In this paper, the morphology, roughness and nano structural properties of SiO2/Poly Vinyl Pyrrolidone synthesized with sol gel method, characterized by using scanning electron microscopy, atomic force microscopy and GPS132A techniques. The main material taken from OXIDE SILICON with weight percentage of 20, 40, 60, 80 and from POLY VINYL PYRROLIDONE with percentages of 80, 60, 40, 20 is synthesized and are called sample 1, 2, 3 and 4 respectively. The samples using lower POLY VINYL PYRROLIDONE (PVP: SiO2; 2: 3 in Weight) can be suitable choices in producing organic field-effect transistors due to their better structuralquality, less energy loss, less roughness sample surface, higher dielectric constant (K=15.99) and better surface morphology as determined with applying DME SPM software and above techniques. This sample can be thus considered as a good element of the future organic field-effect transistors devices.

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APA: Copy

HASHEMIZADEH, S.A.. (2016). NANO ORGANIC TRANSISTOR WITH SIO₂ / POLY VINYLPYRROLIDONE DIELECTRIC. JOURNAL OF NANOSTRUCTURES, 6(1), 17-22. SID. https://sid.ir/paper/210979/en

Vancouver: Copy

HASHEMIZADEH S.A.. NANO ORGANIC TRANSISTOR WITH SIO₂ / POLY VINYLPYRROLIDONE DIELECTRIC. JOURNAL OF NANOSTRUCTURES[Internet]. 2016;6(1):17-22. Available from: https://sid.ir/paper/210979/en

IEEE: Copy

S.A. HASHEMIZADEH, “NANO ORGANIC TRANSISTOR WITH SIO₂ / POLY VINYLPYRROLIDONE DIELECTRIC,” JOURNAL OF NANOSTRUCTURES, vol. 6, no. 1, pp. 17–22, 2016, [Online]. Available: https://sid.ir/paper/210979/en

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