Study of the Electronic Properties of C20-nSin and C20-nGen (n=1-5) nano structures by the approach of Density Functional Theory

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

Nikmaram Farrokh Roya; Gholizadeh Arashti Maryam; KETABI SEPIDEH

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: JOURNAL OF RESEARCH ON MANY BODY SYSTEMS Year:2019 | Volume:8 | Issue:19 Page(s): 206-217

Download Full-Text

Persian Verion

View:

598

Download:

Cites:

Information Journal Paper

Title

Study of the Electronic Properties of C20-nSin and C20-nGen (n=1-5) nano structures by the approach of Density Functional Theory

Author(s)

Nikmaram Farrokh Roya | Gholizadeh Arashti Maryam | KETABI SEPIDEH | Issue Writer Certificate

Keywords

Silicon SubstitutionQ1

GermaniumQ1

density functional theoryQ1

Energy GapQ2

C20 BowlQ2

VocQ1

Abstract

In this research, the thermodynamic stability, Energy of Gap and Electrical conductivity of nano structures of C20 Bowl, C20-nSin (n=1-5) and C20-nGen (n=1-5) were investigated at the level of Quantum calculations of LSDA/6-31G of density functional theory (DFT) at the room temperature. We have studied the application of these structures in solar cells. The most stable structures are C15Ge5 and C17Si3 at 300 K. The results show that the substitutes decrease gap of energy and increase the electrical conductivity, but the number of Silicon or Germanium substitute does not have the regular effect on the gap of energy. The C17Ge3 and C16Si4 have the lowest gap of energy and also have more conductivity. The gap of HOMO and LUMO energy levels of the electron donor and electron acceptor components is the most important factor for the electron transfer with photovoltaic application potential. The two structures of C17Si3 as electron acceptor and C15Ge5 as electron donor with the maximum voltage of 1. 93 volt can be used in producing solar cell.

Cites

No record.

References

No record.

Cite

APA: Copy

Nikmaram, Farrokh Roya, Gholizadeh Arashti, Maryam, & KETABI, SEPIDEH. (2019). Study of the Electronic Properties of C20-nSin and C20-nGen (n=1-5) nano structures by the approach of Density Functional Theory. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, 8(19 ), 206-217. SID. https://sid.ir/paper/243806/en

Vancouver: Copy

Nikmaram Farrokh Roya, Gholizadeh Arashti Maryam, KETABI SEPIDEH. Study of the Electronic Properties of C20-nSin and C20-nGen (n=1-5) nano structures by the approach of Density Functional Theory. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS[Internet]. 2019;8(19 ):206-217. Available from: https://sid.ir/paper/243806/en

IEEE: Copy

Farrokh Roya Nikmaram, Maryam Gholizadeh Arashti, and SEPIDEH KETABI, “Study of the Electronic Properties of C20-nSin and C20-nGen (n=1-5) nano structures by the approach of Density Functional Theory,” JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, vol. 8, no. 19 , pp. 206–217, 2019, [Online]. Available: https://sid.ir/paper/243806/en

Related Journal Papers