EFFECTS OF COMPOUND SEMICONDUCTOR MATERIAL PROPERTIES AND THE DEVICE STRUCTURE ON THE ELECTRON TRANSPORT CHARACTERISTICS IN MESFETS (A MONTE CARLO SIMULATION)

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SAGHAFI K.; MORAVEJI TAFRESHI M.K.; AHMADI V.

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Journal: MODARES TECHNICAL AND ENGINEERING Year:2006 | Volume:- | Issue:22 Page(s): 11-22

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Title

EFFECTS OF COMPOUND SEMICONDUCTOR MATERIAL PROPERTIES AND THE DEVICE STRUCTURE ON THE ELECTRON TRANSPORT CHARACTERISTICS IN MESFETS (A MONTE CARLO SIMULATION)

Author(s)

SAGHAFI K. | MORAVEJI TAFRESHI M.K. | AHMADI V. | Issue Writer Certificate

Keywords

COMPOUND SEMICONDUCTORSQ4

GAASQ4

INGAASQ2

INPQ4

MESFETQ4

MONTE CARLO SIMULATIONQ4

Abstract

In this paper, we examine the effect of the energy difference between the L- and the D-valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in MESFETs. To do this, we use the MONTE CARLO SIMULATION to demonstrate the superiority of the INGAAS MESFET, made on a semi-insulating INP substrate, over both INP and GAAS MESFETs. Furthermore, we study the effects of device structure on the electron transport characteristics. For the first time we study electron transport characteristics in the channel of a LDD INGAAS MESFET with an INP source. This structure demonstrates to have the highest average electron velocity through out its channel among the other MESFETs.

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APA: Copy

SAGHAFI, K., MORAVEJI TAFRESHI, M.K., & AHMADI, V.. (2006). EFFECTS OF COMPOUND SEMICONDUCTOR MATERIAL PROPERTIES AND THE DEVICE STRUCTURE ON THE ELECTRON TRANSPORT CHARACTERISTICS IN MESFETS (A MONTE CARLO SIMULATION). MODARES TECHNICAL AND ENGINEERING, -(22), 11-22. SID. https://sid.ir/paper/25101/en

Vancouver: Copy

SAGHAFI K., MORAVEJI TAFRESHI M.K., AHMADI V.. EFFECTS OF COMPOUND SEMICONDUCTOR MATERIAL PROPERTIES AND THE DEVICE STRUCTURE ON THE ELECTRON TRANSPORT CHARACTERISTICS IN MESFETS (A MONTE CARLO SIMULATION). MODARES TECHNICAL AND ENGINEERING[Internet]. 2006;-(22):11-22. Available from: https://sid.ir/paper/25101/en

IEEE: Copy

K. SAGHAFI, M.K. MORAVEJI TAFRESHI, and V. AHMADI, “EFFECTS OF COMPOUND SEMICONDUCTOR MATERIAL PROPERTIES AND THE DEVICE STRUCTURE ON THE ELECTRON TRANSPORT CHARACTERISTICS IN MESFETS (A MONTE CARLO SIMULATION),” MODARES TECHNICAL AND ENGINEERING, vol. -, no. 22, pp. 11–22, 2006, [Online]. Available: https://sid.ir/paper/25101/en

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