IMPROVING ELECTRONIC PARAMETERS OF SILICON NANOWIRES BY ARSENIC AND PHOSPHOR DOPANTS

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MOALAGHI MARYAM; KOOHISAADI ATIEH; TALEBNIA PARISA; MANAVIZADEH NEGIN; SADEGHIAN LEMRASKI MOJGAN

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Journal: JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES Year:2016 | Volume:4 | Issue:4 Page(s): 11-17

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Title

IMPROVING ELECTRONIC PARAMETERS OF SILICON NANOWIRES BY ARSENIC AND PHOSPHOR DOPANTS

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Keywords

SI NANOWIREQ2

TRANSMISSION SPECTRAQ2

MEAN FREE PATHQ2

ELECTRON MOBILITYQ2

Abstract

In this paper, to improve the electronic parameters of silicon nanowires, the influence of As and P dopants are investigated. These electronic parameters include TRANSMISSION SPECTRA, mobility, MEAN FREE PATH and energy band diagram. To study the conduction mechanism and mobility of the Sinanowires, carrier transport along the long nanowires in presence of many defects (including dopant, vacancy, disorderly and surface roughness) has been investigated. In this paper, to simplify the calculations, short SI NANOWIREs with small amount of defects are considered. Therefore, short length silicon nanowires have been doped by As and P and the effects of the dopants have been analyzed. Simulation results demonstrate that, by increasing the energy, TRANSMISSION SPECTRA increases. It is shown that mobility decreases in carrier concentration more than and for concentration less than this value, mobility is approximately constant.

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APA: Copy

MOALAGHI, MARYAM, KOOHISAADI, ATIEH, TALEBNIA, PARISA, MANAVIZADEH, NEGIN, & SADEGHIAN LEMRASKI, MOJGAN. (2016). IMPROVING ELECTRONIC PARAMETERS OF SILICON NANOWIRES BY ARSENIC AND PHOSPHOR DOPANTS. JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES, 4(4), 11-17. SID. https://sid.ir/paper/252394/en

Vancouver: Copy

MOALAGHI MARYAM, KOOHISAADI ATIEH, TALEBNIA PARISA, MANAVIZADEH NEGIN, SADEGHIAN LEMRASKI MOJGAN. IMPROVING ELECTRONIC PARAMETERS OF SILICON NANOWIRES BY ARSENIC AND PHOSPHOR DOPANTS. JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES[Internet]. 2016;4(4):11-17. Available from: https://sid.ir/paper/252394/en

IEEE: Copy

MARYAM MOALAGHI, ATIEH KOOHISAADI, PARISA TALEBNIA, NEGIN MANAVIZADEH, and MOJGAN SADEGHIAN LEMRASKI, “IMPROVING ELECTRONIC PARAMETERS OF SILICON NANOWIRES BY ARSENIC AND PHOSPHOR DOPANTS,” JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES, vol. 4, no. 4, pp. 11–17, 2016, [Online]. Available: https://sid.ir/paper/252394/en

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