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Information Journal Paper

Title

EFFECT OF IMPURITY ON ELECTRONIC PROPERTIES OF CARBON NANOTUBES

Pages

  641-645

Abstract

 We have studied the effect of IMPURITY on electronic properties of single-walled CARBON NANOTUBEs using DENSITY FUNCTIONAL THEORY. Electronic band structures and density of states of (4, 4) and (7, 0) CARBON NANOTUBEs in the presence of different amount of B and N impurities were calculated. It was found that these impurities have significant effect on the conductivity of CARBON NANOTUBEs. The metallic (4, 4) nanotube remains to be metallic after doping with B and N. The electronic properties of small gap semiconducting (7, 0) tube can extensively change in the presence of IMPURITY. Our results indicate that B-doped and N-doped (7, 0) CARBON NANOTUBEs can be p-type and n-type SEMICONDUCTORS, respectively.

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    • Cite

    APA: Copy

    JALILI, S., JAFARI, M., & HABIBIAN, J.. (2008). EFFECT OF IMPURITY ON ELECTRONIC PROPERTIES OF CARBON NANOTUBES. JOURNAL OF THE IRANIAN CHEMICAL SOCIETY(JICS), 5(4), 641-645. SID. https://sid.ir/paper/282261/en

    Vancouver: Copy

    JALILI S., JAFARI M., HABIBIAN J.. EFFECT OF IMPURITY ON ELECTRONIC PROPERTIES OF CARBON NANOTUBES. JOURNAL OF THE IRANIAN CHEMICAL SOCIETY(JICS)[Internet]. 2008;5(4):641-645. Available from: https://sid.ir/paper/282261/en

    IEEE: Copy

    S. JALILI, M. JAFARI, and J. HABIBIAN, “EFFECT OF IMPURITY ON ELECTRONIC PROPERTIES OF CARBON NANOTUBES,” JOURNAL OF THE IRANIAN CHEMICAL SOCIETY(JICS), vol. 5, no. 4, pp. 641–645, 2008, [Online]. Available: https://sid.ir/paper/282261/en

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