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Information Journal Paper

Title

SM-DOPING EFFECT ON OPTICAL AND ELECTRICAL PROPERTIES OF ZNO FILMS

Pages

  169-175

Abstract

 A series of ZNO: Sm films with Sm content of 0–1.0 at.% were deposited by a chemical solution deposition.The deposited films were characterized by X-ray diffraction, field emission scanning electron microscopy, UV-Vis and luminescent spectrophotometry, and ELECTRICAL RESISTANCE measurement. The experiments revealed that the Sm doping first increased and then decreased the optical TRANSMITTANCE, BAND GAP, and n-type conductivity with increasing Sm content. The film with the Sm content of 0.75 at.% showed optimal optical and electrical properties. The maximal BAND GAP widening was about 0.19 eV. The resistance decrease of~20 times was observed. The photoluminescence measurement indicated that the films showed a strong near BAND GAP emission and a blue-green emission related to intrinsic defect. The refractive index, extinction coefficient, and dielectric constant of the films were calculated with the TRANSMITTANCE and reflectance spectra.

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    • Cite

    APA: Copy

    HE, H.Y., FEI, J., & LU, J.. (2015). SM-DOPING EFFECT ON OPTICAL AND ELECTRICAL PROPERTIES OF ZNO FILMS. JOURNAL OF NANOSTRUCTURE IN CHEMISTRY, 5(2), 169-175. SID. https://sid.ir/paper/333193/en

    Vancouver: Copy

    HE H.Y., FEI J., LU J.. SM-DOPING EFFECT ON OPTICAL AND ELECTRICAL PROPERTIES OF ZNO FILMS. JOURNAL OF NANOSTRUCTURE IN CHEMISTRY[Internet]. 2015;5(2):169-175. Available from: https://sid.ir/paper/333193/en

    IEEE: Copy

    H.Y. HE, J. FEI, and J. LU, “SM-DOPING EFFECT ON OPTICAL AND ELECTRICAL PROPERTIES OF ZNO FILMS,” JOURNAL OF NANOSTRUCTURE IN CHEMISTRY, vol. 5, no. 2, pp. 169–175, 2015, [Online]. Available: https://sid.ir/paper/333193/en

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