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Information Journal Paper

Title

ELECTRONIC PROPERTIES OF BORON AND NITROGEN DOPED SILICENE NANO FLAKE

Pages

  41-48

Abstract

 In this paper, we study the effect of single Boron/Nitrogen impurity atom on electronic properties of a silicene nano flake. Our calculations are based on density functional theory by using Gaussian package. Here, one Si atom in silicene nano flake substitutes with a Boron/Nitrogen atom. The results show that substitution of one Si atom with single Boron/Nitrogen atom increases distance of impurity atom with its nearest neighbors and changes hexagonal structure of silicene nano flake. Doping silicene nano flake with a Boron impurity atom makes its structure curved and causes to create a miniband in energy gap, which increases conductance consequently while doping with a Nitrogen atom causes to produce two spin dependent midbands in energy gap which leads to creating a controllable spin dependent conductance with electron energy for silicene nano flake. Therefore, Nitrogen doped silicene nano flake is good material for design of nano electronic and spintronic devices.

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    APA: Copy

    AHMADIAN, SOMAIEH, & RAMEZANI, MOHAMMAD HADI. (2016). ELECTRONIC PROPERTIES OF BORON AND NITROGEN DOPED SILICENE NANO FLAKE. JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES, 1(4), 41-48. SID. https://sid.ir/paper/349308/en

    Vancouver: Copy

    AHMADIAN SOMAIEH, RAMEZANI MOHAMMAD HADI. ELECTRONIC PROPERTIES OF BORON AND NITROGEN DOPED SILICENE NANO FLAKE. JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES[Internet]. 2016;1(4):41-48. Available from: https://sid.ir/paper/349308/en

    IEEE: Copy

    SOMAIEH AHMADIAN, and MOHAMMAD HADI RAMEZANI, “ELECTRONIC PROPERTIES OF BORON AND NITROGEN DOPED SILICENE NANO FLAKE,” JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES, vol. 1, no. 4, pp. 41–48, 2016, [Online]. Available: https://sid.ir/paper/349308/en

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