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مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Information Journal Paper

Title

RECOGNITION OF THE IRREGULAR PATTERNS IN THE FABRICATION PROCESS OF SEMICONDUCTOR DEVICES USING NEURAL NETWORKS

Pages

  11-22

Keywords

Not Registered.

Abstract

 It is of prime importance to obtain information about irregular patterns on the output control chart of a semiconductor manufacturing process as well as to be able to predict the occurrence of such patterns. Here, processing of the gate in a 27MHz submicron GaAs MESFET of a monolithic microwave integrated circuit is chosen as an example, the method for extracting control charts, use of process data is described and the time series and neural network methods are used to predict the patterns. Unlike equip mental based modeling this method can predict slow changes in the output. Time series modeling of the output is done by classical Box-Jenkins. The ability to predict the irregular patterns as well as the effect of the forecasted length is investigated, using an optimum neural network model and a series of simulation.

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  • Cite

    APA: Copy

    FATHIPOUR, M., NICKTASH, A., & LOCUS, C.. (2000). RECOGNITION OF THE IRREGULAR PATTERNS IN THE FABRICATION PROCESS OF SEMICONDUCTOR DEVICES USING NEURAL NETWORKS. JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TEHRAN), 34(2 (68)), 11-22. SID. https://sid.ir/paper/381194/en

    Vancouver: Copy

    FATHIPOUR M., NICKTASH A., LOCUS C.. RECOGNITION OF THE IRREGULAR PATTERNS IN THE FABRICATION PROCESS OF SEMICONDUCTOR DEVICES USING NEURAL NETWORKS. JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TEHRAN)[Internet]. 2000;34(2 (68)):11-22. Available from: https://sid.ir/paper/381194/en

    IEEE: Copy

    M. FATHIPOUR, A. NICKTASH, and C. LOCUS, “RECOGNITION OF THE IRREGULAR PATTERNS IN THE FABRICATION PROCESS OF SEMICONDUCTOR DEVICES USING NEURAL NETWORKS,” JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TEHRAN), vol. 34, no. 2 (68), pp. 11–22, 2000, [Online]. Available: https://sid.ir/paper/381194/en

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