A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM

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Soleimaninia M.; RAISALI G.R.; MOSLEHI A.

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Journal Paper

Paper Information

Journal: JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY Year:2020 | Volume:41 | Issue:3 (93) Page(s): 53-62

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Title

A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM

Author(s)

Soleimaninia M. | RAISALI G.R. | MOSLEHI A. | Issue Writer Certificate

Keywords

Computational analysisQ1

Single event upsetQ1

Low energy protonsQ1

65 nm CMOS SRAMQ1

Geant4Q1

Abstract

This investigation is a Computational analysis of a kind of radiation effect on electronic devices, known as the Single event upset (SEU) with the Geant4 toolkit. Accordingly, the results are compared with the similar experimental work and a simulation study which is performed by CRÈ ME-MC Monte Carlo simulation code. Single event upsets are the most common events which abruptly change the logic state of the device (1 to 0 or vice versa) and cause a disturbance in their performance. In the simulations, Low energy protons (< 10 MeV)-induced SEU cross sections in a 65 nm CMOS SRAM were calculated and various particle effectivenesses and physical mechanisms inducing upsets were studied. The analysis of the results showed that most of the upsets occur due to incident protons with energies of less than 1 MeV under the mechanism of direct ionization. This is due to the fact that protons entering the sensitive volume have the maximum stopping power. This study also revealed that for protons with energies between 2 and 10 MeV, recoiled silicon atoms have a dominant role in SEU while other particles produced in preceding layers have a negligible effect compared to the recoiled silicon produced inside the sensitive volume.

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APA: Copy

Soleimaninia, M., RAISALI, G.R., & MOSLEHI, A.. (2020). A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 41(3 (93) ), 53-62. SID. https://sid.ir/paper/400863/en

Vancouver: Copy

Soleimaninia M., RAISALI G.R., MOSLEHI A.. A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY[Internet]. 2020;41(3 (93) ):53-62. Available from: https://sid.ir/paper/400863/en

IEEE: Copy

M. Soleimaninia, G.R. RAISALI, and A. MOSLEHI, “A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM,” JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, vol. 41, no. 3 (93) , pp. 53–62, 2020, [Online]. Available: https://sid.ir/paper/400863/en

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