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Information Journal Paper

Title

Effects of the Presence of Staggered and Gate Potential on Transport in Bernal Stacked ABA Trilayer Graphene

Pages

  43-55

Abstract

 Graphene is a two-dimensional carbon-arranged structure in the hexagonal lattice, each cell of which is non-Bravais and consists of two A, B substructures of atoms that can be maintained in (from one to several layers maximum of its) two-dimensional properties. Trilayer Graphene has been studied due to its stability and abundance over other structures. Considering the type and number of layers and how they are placed in relation to each other in the properties of the material, causing a different dispersion spectrum, we will see different transport properties in the structures. Thus, in the study of Trilayer Graphene, the three distinct AAA, ABA and ABC– stacked layers were introduced and then analyzed by the Hamiltonian analysis and the Bernal strip structure. Investigations were carried out once in normal conditions and again in the presence of two types of potentials since in the analysis of electrical transport, we consider a piece of Trilayer Graphene in the presence of a potential sandwiched between two normal these are without potential. The electrical transport properties by analyzing the flow diagram, derived from the Landaure-Buttiker approach, indicate the applicability of Trilayer Graphene in the production and construction of transistors.

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    APA: Copy

    Ahmadzadeh, Nesa, Rashidian, Zeinab, & Baharvand, Abdolrahim. (2020). Effects of the Presence of Staggered and Gate Potential on Transport in Bernal Stacked ABA Trilayer Graphene. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, 9(4 (23) ), 43-55. SID. https://sid.ir/paper/408559/en

    Vancouver: Copy

    Ahmadzadeh Nesa, Rashidian Zeinab, Baharvand Abdolrahim. Effects of the Presence of Staggered and Gate Potential on Transport in Bernal Stacked ABA Trilayer Graphene. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS[Internet]. 2020;9(4 (23) ):43-55. Available from: https://sid.ir/paper/408559/en

    IEEE: Copy

    Nesa Ahmadzadeh, Zeinab Rashidian, and Abdolrahim Baharvand, “Effects of the Presence of Staggered and Gate Potential on Transport in Bernal Stacked ABA Trilayer Graphene,” JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, vol. 9, no. 4 (23) , pp. 43–55, 2020, [Online]. Available: https://sid.ir/paper/408559/en

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