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Information Journal Paper

Title

THE INVESTIGATION OF FERROELECTRIC THIN FILMSBY USING AN ISING MODEL IN A TRANSVERSE FIELD

Pages

  55-62

Keywords

Not Registered.

Abstract

 Ferroelectrie films have been studied by an Ising model in a transverse field within the mean-field approximation. We consider an N-layer film of simple cubic symmetry with nearest- neighbor exchange in which the exchange strength and transverse field are assumed in the Ns surface layers to be different from the bulk values, and we derive and illustrate expressions for the phase diagrams and polarization profile. In ferroelectric films, Curie temperature can be shifted to either lower and higher temperature compared with the corresponding bulk value. If the surface exchange strength is strong enough, there is still a phase transition to ferroelectricity even when the transverse field is larger than the bulk critical value. In surface-enhanced film with Ns≥2 the maximum in the order parameter profile occurs in the layers next to the outermost surface layer.      

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    APA: Copy

    FARJAMI SHAYESTEH, S., & SOLIMANI, M.A.. (2002). THE INVESTIGATION OF FERROELECTRIC THIN FILMSBY USING AN ISING MODEL IN A TRANSVERSE FIELD. JOURNAL OF SCIENCE (KHARAZMI UNIVERSITY), 2(1-2), 55-62. SID. https://sid.ir/paper/44123/en

    Vancouver: Copy

    FARJAMI SHAYESTEH S., SOLIMANI M.A.. THE INVESTIGATION OF FERROELECTRIC THIN FILMSBY USING AN ISING MODEL IN A TRANSVERSE FIELD. JOURNAL OF SCIENCE (KHARAZMI UNIVERSITY)[Internet]. 2002;2(1-2):55-62. Available from: https://sid.ir/paper/44123/en

    IEEE: Copy

    S. FARJAMI SHAYESTEH, and M.A. SOLIMANI, “THE INVESTIGATION OF FERROELECTRIC THIN FILMSBY USING AN ISING MODEL IN A TRANSVERSE FIELD,” JOURNAL OF SCIENCE (KHARAZMI UNIVERSITY), vol. 2, no. 1-2, pp. 55–62, 2002, [Online]. Available: https://sid.ir/paper/44123/en

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