INVESTIGATION OF THE EFFECT OF HYDROGEN IMPLANTATION INTO SIC CRYSTAL BEFORE AND AFTER THERMAL OXIDATION AT OXYGEN AMBIENT

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ARGHAVANI NIA B.; HANTEHZADEH M.R.; AGHA ALIGOL D.; BAGHIZADEH A.

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Journal: JOURNAL OF SCIENCES (ISLAMIC AZAD UNIVERSITY) Year:2011 | Volume:21 | Issue:79 (PHYSICS ISSUE) Page(s): 1-12

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Title

INVESTIGATION OF THE EFFECT OF HYDROGEN IMPLANTATION INTO SIC CRYSTAL BEFORE AND AFTER THERMAL OXIDATION AT OXYGEN AMBIENT

Author(s)

ARGHAVANI NIA B. | HANTEHZADEH M.R. | AGHA ALIGOL D. | BAGHIZADEH A. | Issue Writer Certificate

Keywords

ION IMPLANTATIONQ2

SICQ2

THERMAL OXIDATIONQ2

CRYSTAL DAMAGEQ2

Abstract

Introduction: Today, Silicon carbide (SiC) is widely used in semiconductor industry, especially in single crystal structure, it can be used in fabrication of high-temperature, highpower, and high-frequency electronic devices. Also, this semiconductor has variety of applications in laser diodes, photo-diodes and different sensors. SIC is a wide band-gap indirect semiconductor. It has high hardness and its electrical and optical properties differ greatly from one-type to another. In all SIC poly-types chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms. Due to the arrangement of Si and C atoms in the SIC lattice structure, there are different types of crystal structures, each has its unique physical properties. But only the most common poly-types of SIC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC. Frequently, two structures, 4H-SiC and 6H-SiC, have attracted economically the attention of semiconductor industry.Aim: This paper has been investigated effects of hydrogen implantation on the surface structure of 6H-SiC crystal before and after THERMAL OXIDATION at oxygen ambient. H ions were implanted in SIC with dose of 1×1016 and energy of 15keV.Materials and Methods: SIC surface has been investigated by AFM (Atomic Force Microscopic) technique in implanted and un-implanted regions separately. Also, crystal quality and effect of H implantation on the SIC crystal have been determined by RBSChanneling (Rutherford Back Scattering) and distribution of H ions in the SIC by ERD technique. Furthermore, bonding between SIC atoms have been investigated in implanted and un-implanted regions by FTIR technique.Results: AFM results show roughness in the implanted area increases in compare with un-implanted area but, we could not observe any evidence of implantation effect in the nonoscratchs that were created during polishing process. Moreover, we can see in the RBSChanneling that the collision of H ions has affected a little on the SIC atoms. In addition, FTIR results in two areas show a significant difference between two regions both before and after oxidation at oxygen ambient.Conclusion: Distribution of hydrogen atoms in SIC was determined accurately using ERD and compared to simulation results. It has been shown the maximum distribution of hydrogen atoms in depth is about 200nm. So, the comparison indicates proper agreement between experimental and simulation results.The result of RBS channeling Analysis showed difference on oxide layer in both implanted and un-implanted regions. Although there is no remarkable difference among spectra obtained from two reigns before oxidation, the results of FTIR indicated intensity of transition peak related to Si-O bond of two regions after oxidation is very different. In addition, the FTIR spectra show obviously the presence of carbon and hydrogen in implanted region.

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APA: Copy

ARGHAVANI NIA, B., HANTEHZADEH, M.R., AGHA ALIGOL, D., & BAGHIZADEH, A.. (2011). INVESTIGATION OF THE EFFECT OF HYDROGEN IMPLANTATION INTO SIC CRYSTAL BEFORE AND AFTER THERMAL OXIDATION AT OXYGEN AMBIENT. JOURNAL OF SCIENCES (ISLAMIC AZAD UNIVERSITY), 21(79 (PHYSICS ISSUE)), 1-12. SID. https://sid.ir/paper/70453/en

Vancouver: Copy

ARGHAVANI NIA B., HANTEHZADEH M.R., AGHA ALIGOL D., BAGHIZADEH A.. INVESTIGATION OF THE EFFECT OF HYDROGEN IMPLANTATION INTO SIC CRYSTAL BEFORE AND AFTER THERMAL OXIDATION AT OXYGEN AMBIENT. JOURNAL OF SCIENCES (ISLAMIC AZAD UNIVERSITY)[Internet]. 2011;21(79 (PHYSICS ISSUE)):1-12. Available from: https://sid.ir/paper/70453/en

IEEE: Copy

B. ARGHAVANI NIA, M.R. HANTEHZADEH, D. AGHA ALIGOL, and A. BAGHIZADEH, “INVESTIGATION OF THE EFFECT OF HYDROGEN IMPLANTATION INTO SIC CRYSTAL BEFORE AND AFTER THERMAL OXIDATION AT OXYGEN AMBIENT,” JOURNAL OF SCIENCES (ISLAMIC AZAD UNIVERSITY), vol. 21, no. 79 (PHYSICS ISSUE), pp. 1–12, 2011, [Online]. Available: https://sid.ir/paper/70453/en

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