REDISTRIBUTION OF IMPLANTED ARSENIC (AS) ON THE RATE OF OXIDE GROWTH DURING STEAM OXIDATION OF SI

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AGHA ALI GOL D.; BAGHIZADEH A.; FATHI D.

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Journal: Iranian Journal of Physics Research Year:2006 | Volume:5 | Issue:4 Page(s): 243-248

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Information Journal Paper

Title

REDISTRIBUTION OF IMPLANTED ARSENIC (AS) ON THE RATE OF OXIDE GROWTH DURING STEAM OXIDATION OF SI

Author(s)

AGHA ALI GOL D. | BAGHIZADEH A. | FATHI D. | Issue Writer Certificate

Keywords

RUHTERFORD BACKSCATTERING SPECTROSCOPYQ4

THERMAL OXIDATIONQ4

ION IMPLANTATIONQ4

IMPURITY REDISTRIBUTIONQ4

Abstract

In this article, we investigate the redistribution of implanted As+ ion and effect of it on the rate of oxide growth during steam oxidation of Si wafers at 900°C. Our results show that a highly enriched, thin layer of Arsenic forms at the interface between the oxide and the underlying Si. Also, the oxidation rate was found to increase depending on the depth distribution and dose of the implanted impurity as. The thin as layer collected at the interface can be used in the design of shallow junctions. Rutherford Backscattering Spectroscopy (RBS) was used to investigate the oxide characteristics.

Cites

RBS-CHANNELING ANALYSIS AS A POWERFUL TOOL TO STUDY THE CRYSTAL STRUCTURE OF MATERIALS

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APA: Copy

AGHA ALI GOL, D., BAGHIZADEH, A., & FATHI, D.. (2006). REDISTRIBUTION OF IMPLANTED ARSENIC (AS) ON THE RATE OF OXIDE GROWTH DURING STEAM OXIDATION OF SI. IRANIAN JOURNAL OF PHYSICS RESEARCH, 5(4), 243-248. SID. https://sid.ir/paper/2005/en

Vancouver: Copy

AGHA ALI GOL D., BAGHIZADEH A., FATHI D.. REDISTRIBUTION OF IMPLANTED ARSENIC (AS) ON THE RATE OF OXIDE GROWTH DURING STEAM OXIDATION OF SI. IRANIAN JOURNAL OF PHYSICS RESEARCH[Internet]. 2006;5(4):243-248. Available from: https://sid.ir/paper/2005/en

IEEE: Copy

D. AGHA ALI GOL, A. BAGHIZADEH, and D. FATHI, “REDISTRIBUTION OF IMPLANTED ARSENIC (AS) ON THE RATE OF OXIDE GROWTH DURING STEAM OXIDATION OF SI,” IRANIAN JOURNAL OF PHYSICS RESEARCH, vol. 5, no. 4, pp. 243–248, 2006, [Online]. Available: https://sid.ir/paper/2005/en

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