INFLUENCE OF GATE OVERLAP ENGINEERING ON AMBIPOLAR AND HIGH FREQUENCY CHARACTERISTICS OF TUNNEL-CNTFET

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SHAKER A.

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Journal Paper

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Journal: SUPERLATTICES AND MICROSTRUCTURES Year:2015 | Volume:86 | Issue:- Page(s): 518-530

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Title

INFLUENCE OF GATE OVERLAP ENGINEERING ON AMBIPOLAR AND HIGH FREQUENCY CHARACTERISTICS OF TUNNEL-CNTFET

Author(s)

SHAKER A. | Issue Writer Certificate

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Abstract

Cites

BAND BENDING ENGINEERING IN P-I-N GATE ALL AROUND CARBON NANOTUBE FIELD EFFECT TRANSISTORS BY MULTI-SEGMENT GATE

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APA: Copy

SHAKER, A.. (2015). INFLUENCE OF GATE OVERLAP ENGINEERING ON AMBIPOLAR AND HIGH FREQUENCY CHARACTERISTICS OF TUNNEL-CNTFET. SUPERLATTICES AND MICROSTRUCTURES, 86(-), 518-530. SID. https://sid.ir/paper/708120/en

Vancouver: Copy

SHAKER A.. INFLUENCE OF GATE OVERLAP ENGINEERING ON AMBIPOLAR AND HIGH FREQUENCY CHARACTERISTICS OF TUNNEL-CNTFET. SUPERLATTICES AND MICROSTRUCTURES[Internet]. 2015;86(-):518-530. Available from: https://sid.ir/paper/708120/en

IEEE: Copy

A. SHAKER, “INFLUENCE OF GATE OVERLAP ENGINEERING ON AMBIPOLAR AND HIGH FREQUENCY CHARACTERISTICS OF TUNNEL-CNTFET,” SUPERLATTICES AND MICROSTRUCTURES, vol. 86, no. -, pp. 518–530, 2015, [Online]. Available: https://sid.ir/paper/708120/en

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