BAND BENDING ENGINEERING IN P-I-N GATE ALL AROUND CARBON NANOTUBE FIELD EFFECT TRANSISTORS BY MULTI-SEGMENT GATE

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NADERI ALI; ABDI TAHNE BEHROOZ

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Paper Information

Journal: International Journal of Nano Dimension Year:2017 | Volume:8 | Issue:4 Page(s): 341-350

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Information Journal Paper

Title

BAND BENDING ENGINEERING IN P-I-N GATE ALL AROUND CARBON NANOTUBE FIELD EFFECT TRANSISTORS BY MULTI-SEGMENT GATE

Author(s)

NADERI ALI | ABDI TAHNE BEHROOZ | Issue Writer Certificate

Keywords

CURRENT RATIO

CUT-OFF FREQUENCY

LEAKAGE CURRENT

MSG-T-CNTFET

NEGF

SATURATION CURRENT

SUBTHRESHOLD SWING

Abstract

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF CURRENT RATIO and small SATURATION CURRENT. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to band tunneling (B-B tunneling) is a dominant transport mechanism in p-i-n structures which is more controlled here by band bending engineering. Gate metal at source side causes more bands bending at channel to source interface and the gate metal at drain side acts as a filter which reduces the LEAKAGE CURRENT. Results demonstrate that by parameter engineering of gate metal, the proposed structure improves the SATURATION CURRENT, LEAKAGE CURRENT, CURRENT RATIO, sub threshold swing, breakdown voltage and CUT-OFF FREQUENCY in comparison with conventional structure. Also, to obtain the optimum parameters, design considerations has been done in terms of difference in work functions and change in the length of each part of gates. Simulations and comparisons have been performed using none equilibrium Green’s function and self-consistent solution between Poisson and Schrodinger equations.

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APA: Copy

NADERI, ALI, & ABDI TAHNE, BEHROOZ. (2017). BAND BENDING ENGINEERING IN P-I-N GATE ALL AROUND CARBON NANOTUBE FIELD EFFECT TRANSISTORS BY MULTI-SEGMENT GATE. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), 8(4), 341-350. SID. https://sid.ir/paper/322358/en

Vancouver: Copy

NADERI ALI, ABDI TAHNE BEHROOZ. BAND BENDING ENGINEERING IN P-I-N GATE ALL AROUND CARBON NANOTUBE FIELD EFFECT TRANSISTORS BY MULTI-SEGMENT GATE. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND)[Internet]. 2017;8(4):341-350. Available from: https://sid.ir/paper/322358/en

IEEE: Copy

ALI NADERI, and BEHROOZ ABDI TAHNE, “BAND BENDING ENGINEERING IN P-I-N GATE ALL AROUND CARBON NANOTUBE FIELD EFFECT TRANSISTORS BY MULTI-SEGMENT GATE,” INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), vol. 8, no. 4, pp. 341–350, 2017, [Online]. Available: https://sid.ir/paper/322358/en

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