SLD-MOSCNT: ANEW MOSCNT WITH STEP-LINEAR DOPING PROFILE IN THE SOURCE AND DRAIN REGIONS

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TAHNE B.A.

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Journal Paper

Paper Information

Journal: INTERNATIONAL JOURNAL OF MODERN PHYSICS B Year:2016 | Volume:30 | Issue:- Page(s): 1650242-1650242

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Information Journal Paper

Title

SLD-MOSCNT: ANEW MOSCNT WITH STEP-LINEAR DOPING PROFILE IN THE SOURCE AND DRAIN REGIONS

Author(s)

TAHNE B.A. | Issue Writer Certificate

Keywords

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Abstract

Cites

BAND BENDING ENGINEERING IN P-I-N GATE ALL AROUND CARBON NANOTUBE FIELD EFFECT TRANSISTORS BY MULTI-SEGMENT GATE

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APA: Copy

TAHNE, B.A.. (2016). SLD-MOSCNT: ANEW MOSCNT WITH STEP-LINEAR DOPING PROFILE IN THE SOURCE AND DRAIN REGIONS. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 30(-), 1650242-1650242. SID. https://sid.ir/paper/710514/en

Vancouver: Copy

TAHNE B.A.. SLD-MOSCNT: ANEW MOSCNT WITH STEP-LINEAR DOPING PROFILE IN THE SOURCE AND DRAIN REGIONS. INTERNATIONAL JOURNAL OF MODERN PHYSICS B[Internet]. 2016;30(-):1650242-1650242. Available from: https://sid.ir/paper/710514/en

IEEE: Copy

B.A. TAHNE, “SLD-MOSCNT: ANEW MOSCNT WITH STEP-LINEAR DOPING PROFILE IN THE SOURCE AND DRAIN REGIONS,” INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol. 30, no. -, pp. 1650242–1650242, 2016, [Online]. Available: https://sid.ir/paper/710514/en

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