Information Journal Paper
APA:
Copy. (2017). Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers. JOURNAL OF COMPUTATIONAL ELECTRONICS, 16(-), 676-684. SID. https://sid.ir/paper/740674/en
Vancouver:
Copy. Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers. JOURNAL OF COMPUTATIONAL ELECTRONICS[Internet]. 2017;16(-):676-684. Available from: https://sid.ir/paper/740674/en
IEEE:
Copy, “Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers,” JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 16, no. -, pp. 676–684, 2017, [Online]. Available: https://sid.ir/paper/740674/en