CHARACTERIZATION OF SILICON-BORON SLAB DOPING IN THE SI/SI-B/SI STRUCTURE GROWN BY MOLECULAR BEAM EPITAXY

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SADEGHZADEH MOHAMMAD ALI; ABOLHASANI ELHAM

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Seminar Paper

Paper Information

Seminar: NATIONAL VACUUM CONFERENCE IRAN
Year:2008 | Issue:3

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Title

CHARACTERIZATION OF SILICON-BORON SLAB DOPING IN THE SI/SI-B/SI STRUCTURE GROWN BY MOLECULAR BEAM EPITAXY

Author(s)

SADEGHZADEH MOHAMMAD ALI | ABOLHASANI ELHAM

Keywords

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Abstract

ELECTRICAL CHARACTERIZATION OF SILICON-BORON SLAB DOPING IN THE SI/SI-B/SI STRUCTURE GROWN BY MOLECULAR BEAM EPITAXY (MBE) HAS BEEN CONSIDERED IN THIS PAPER. AFTER GROWTH, THE TRANSVERSAL HAL VOLTAGE HAS BEEN MEASURED IN THE 60-300K TEMPERATURE RANGE AND TEMPERATURE DEPENDENCE OF HALL COEFFICIENT HAS BEEN DETERMINED. THE VOLUME CONCENTRATION AND BINDING ENERGY OF DO PANT, HALL FACTOR AND LIFTING COEFFICIENT OF FERMI LEVEL HAVE BEEN DETERMINED BY THEORETICAL SIMULATION OF HOLE SHEET DENSITY VERSUS TEMPERATURE.

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APA: Copy

SADEGHZADEH, MOHAMMAD ALI, & ABOLHASANI, ELHAM. (2008). CHARACTERIZATION OF SILICON-BORON SLAB DOPING IN THE SI/SI-B/SI STRUCTURE GROWN BY MOLECULAR BEAM EPITAXY. NATIONAL VACUUM CONFERENCE IRAN. SID. https://sid.ir/paper/905394/en

Vancouver: Copy

SADEGHZADEH MOHAMMAD ALI, ABOLHASANI ELHAM. CHARACTERIZATION OF SILICON-BORON SLAB DOPING IN THE SI/SI-B/SI STRUCTURE GROWN BY MOLECULAR BEAM EPITAXY. 2008. Available from: https://sid.ir/paper/905394/en

IEEE: Copy

MOHAMMAD ALI SADEGHZADEH, and ELHAM ABOLHASANI, “CHARACTERIZATION OF SILICON-BORON SLAB DOPING IN THE SI/SI-B/SI STRUCTURE GROWN BY MOLECULAR BEAM EPITAXY,” presented at the NATIONAL VACUUM CONFERENCE IRAN. 2008, [Online]. Available: https://sid.ir/paper/905394/en

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