SIMULATION OF AMORPHOUS SILICON DEPOSITION IN PECVD REACTOR AND INVESTIGATING THE EFFECT OF CHAMBER PRESSURE ON CHARACTERISTICS OF THE DEPOSITED LAYER

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ILATI HESAM; BAVAFA MEYSAM; BIJAN RASHIDIAN

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Seminar Paper

Paper Information

Seminar: NATIONAL VACUUM CONFERENCE IRAN
Year:2008 | Issue:3

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Title

SIMULATION OF AMORPHOUS SILICON DEPOSITION IN PECVD REACTOR AND INVESTIGATING THE EFFECT OF CHAMBER PRESSURE ON CHARACTERISTICS OF THE DEPOSITED LAYER

Author(s)

ILATI HESAM | BAVAFA MEYSAM | BIJAN RASHIDIAN

Keywords

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Abstract

IN THIS PAPER THE SIMULATION RESULTS OF AMORPHOUS SILICON DEPOSITION BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD AND THE EFFECTS OF CHAMBER PRESSURE ON CHARACTERISTICS OF THE DEPOSITED LAYER IS PRESENTED. FURTHERMORE, TWO QUALITATIVE CRITERIONS ARE DEFINED FOR EVALUATION OF THE QUALITY AND UNIFORMITY OF DEPOSITED LAYER. THE EFFECT OF CHAMBER PRESSURE ON DEPOSITION RATE, BOTH OVER THE SUBSTRATE AND THE POWER ELECTRODE IS FOUND.

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APA: Copy

ILATI, HESAM, BAVAFA, MEYSAM, & BIJAN, RASHIDIAN. (2008). SIMULATION OF AMORPHOUS SILICON DEPOSITION IN PECVD REACTOR AND INVESTIGATING THE EFFECT OF CHAMBER PRESSURE ON CHARACTERISTICS OF THE DEPOSITED LAYER. NATIONAL VACUUM CONFERENCE IRAN. SID. https://sid.ir/paper/905418/en

Vancouver: Copy

ILATI HESAM, BAVAFA MEYSAM, BIJAN RASHIDIAN. SIMULATION OF AMORPHOUS SILICON DEPOSITION IN PECVD REACTOR AND INVESTIGATING THE EFFECT OF CHAMBER PRESSURE ON CHARACTERISTICS OF THE DEPOSITED LAYER. 2008. Available from: https://sid.ir/paper/905418/en

IEEE: Copy

HESAM ILATI, MEYSAM BAVAFA, and RASHIDIAN BIJAN, “SIMULATION OF AMORPHOUS SILICON DEPOSITION IN PECVD REACTOR AND INVESTIGATING THE EFFECT OF CHAMBER PRESSURE ON CHARACTERISTICS OF THE DEPOSITED LAYER,” presented at the NATIONAL VACUUM CONFERENCE IRAN. 2008, [Online]. Available: https://sid.ir/paper/905418/en

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