Information Seminar Paper
APA:
CopyKEIHANI, M., MASOUDI, A., AZIM ARAGHI, M.E., & NADERI, N.. (2014). NANO-POROSITY IN P-TYPE SILICON BY ELECTROCHEMICAL ETCH. IRANIAN PHYSICAL CHEMISTRY CONFERENCE. SID. https://sid.ir/paper/933605/en
Vancouver:
CopyKEIHANI M., MASOUDI A., AZIM ARAGHI M.E., NADERI N.. NANO-POROSITY IN P-TYPE SILICON BY ELECTROCHEMICAL ETCH. 2014. Available from: https://sid.ir/paper/933605/en
IEEE:
CopyM. KEIHANI, A. MASOUDI, M.E. AZIM ARAGHI, and N. NADERI, “NANO-POROSITY IN P-TYPE SILICON BY ELECTROCHEMICAL ETCH,” presented at the IRANIAN PHYSICAL CHEMISTRY CONFERENCE. 2014, [Online]. Available: https://sid.ir/paper/933605/en