The paper presents a study on the MAGNETORESISTANCE (MR) and anisotropic MAGNETORESISTANCE (AMR) properties of La0.4Pr0.3Ca0.3MnO3 (LPCMO) thin films. The thin films were grown using pulsed laser deposition method on LaAlO3 (LAO) (111) and MgO (MGO) (100) substrates, with a thickness of approximately 90 nm as estimated by X-Ray reflectometry (XRR) method. The LPCMO sample on the LAO substrate exhibited a lower metal-insulation transition than the one on the MgO substrate due to high compressive stress. The MR was found to be 57% and 98% for LPCMO/LAO and the LPCMO/MGO films, respectively. The LPCMO/MGO sample also showed a significantly higher MR (80%) compared to LPCMO/LAO sample (32%), indicating its potential application.

La0. 7Sr0. 3MnO3 (LSMO) and La0. 7Ba0. 3MnO3 (LBMO) Polycrystalline manganite nanoparticles were prepared by combustion method using glycine fuel. The ignition process was done at 360 ° C and 330 ° C for LSMO and LBMO, respectively. Both of the samples have rhombohedral structure using XRD analysis. The reduction is observed in electrical resistivity when external magnetic field is applied during the decrease in temperature from 300 to 89 ° K, which is due to the tunneling between particles. The MAGNETORESISTANCE (MR) of samples was measured in this range of temperature in both the presence and absence of a magnetic field of about 10 kG. The colossal role of a kind of extrinsic MR which is 19% and 22% for LSMO and LBMO, respectively, has been investigated in this research. The metal– insulator transition temperature of 200 ° K is recorded for LBMO.

The angular dependent MAGNETORESISTANCE oscillation (ADMRO) of the stage-2 IBr graphite intercalation compound (GIC) was studied between 1.8 K and 110 K in magnetic fields between 1 and 9 T. There was a series of peaks in the c-axis resistance as the field direction was changed from the c axis to the (001) plane. The field independence of the angular positions of the peaks, showing that the oscillation is not from the Shubnikov-de Haas effect, and the presence of the oscillation at high temperatures indicate that the effect is semiclassic. The location and the relative amplitudes of the peaks show that the ADMRO in this compound does not follow the predictions for the symmetrical corrugation model of the cylindrical Fermi surface. The reason is attributed to the presence of two cylindrical Fermi surfaces and zone folding of the Fermi surface by the periodicity of the IBr lattice in this compound.

In this paper, by applying strain and magnetic barrier simultaneously in gapped graphene which has been located between two ferromagnetic electrodes, the transmission of the coefficient and conductance of the junction have been studied and the condition has been provided to reach giant MAGNETORESISTANCE. The results show that the valley gap cannot be achieved in graphene only by using strain and it comes into being in strain graphene with magnetic barrier and it is controllable by changing substrate mass gap. Also, it is found that the MR strongly depends on the strain, magnetic barrier, magnetization configuration of the ferromagnetic regions, and substrate mass gap in a way that by applying appropriate values for these parameters, the MR can reach up to 100%. Specially, for K valley, by changing the configuration magnetization from parallel to antiparallel, the antiparallel conductance reduces to zero faster than the parallel conductance for the above parameters. So, the junction is transparent only for parallel conductance leading to an increase of MR to 100%. Tunability of the MR reveals the potential application of the proposed junction for future spin-electronics devices.

in this study, Ni-Cu/Cu multilayers from a single sulfate/sulfamate bath using electrodeposition method from two solutions; ultrapure solution (without impurity of Co) and impure solution (with 0. 2% Co) in galvanostat/potentiostat (G/P) mode was prepared at optimized Cu deposition potential. MAGNETORESISTANCE (MR) measurements were performed at room temperature for the Ni-Cu/Cu multilayers as a function of (Cu) layer thickness for both ultrapure and impure electrolytes. The MAGNETORESISTANCE curves represent an anisotropic MAGNETORESISTANCE (AMR) for multilayered samples prepared by ultrapure electrolyte and giant MAGNETORESISTANCE (GMR) by impure electrolyte, so that the maximum GMR value was obtained for Ni-Cu/Cu multilayer with 3. 0nm/4. 2nm thickness. The X-ray diffraction pattern (XRD) was used for structural analysis of multilayer films. The XRD pattern confirmed the presence of satellite peaks, indicating the existence of a superlattice structure. The nominal thickness of the multilayers (Λ nominal) was compared with the thickness of the X-ray diffraction pattern (Λ XRD), which was significantly consistent. . The morphology of the samples was performed using scanning electron microscopy (SEM) which implies uniformity of deposition during the layering process. The results showed that with decreasing thickness of nonmagnetic layer (Cu) the coercivity decreased and saturation magnetization increased.

In the present paper, influence of photon on resistance of non-180o domain wall in metallic magnetic nanowires has been studied using the semiclassical approach. The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Neel-type domain wall between two ferromagnetic domains with relative magnetization angle less than 180° is considered. By increasing this angle, the contribution of the domain wall in the resistivity of the nanowire becomes considerable. It is also found that the fundamental contribution of the domain wall in resistivity can be controlled by propagating photon. These results are valuable in designing spintronic devices based on magnetic nanowires.

In this research single phaseLa0. 7(Sr 1-xBax)0. 3MnO3(x =0، 0. 1، 0. 2، 0. 3) nanomanganite with crystalline size of 18-28 nm have been prepared by sol gel method. The structural properties have been studied using X-ray diffraction spectra with its Rietveld analysis and scaning electron microscope images. The magnetic and elctrical properties have been investigated by measuring the ac magnetic susceptibility and resistivity in the presence of magnetic fields in the range of 0-20 kOe. The obtained results from ac magnetic susceptibility show that the Curie temperture of the samples are above room temperture. The results of resistivity show that the metal-insulator phase transition temperture of La0. 7 Sr0. 3 MnO3 and La0. 7 (Sr0. 3 Ba0. 2) MnO3 compounds are below room temperture. The resistivity of the samples strongly decreases and their MAGNETORESISTANCE almost linearly increases by incrasing the applied magnetic field at different tempertures. The value of MAGNETORESISTANCE for La0. 7 (Sr0. 3 Ba0. 2) MnO3 Ecompound is 10 % and 14 % at 275 K and 200 K، and for La0. 7 Sr0. 3 MnO3 Ecompound is 13 % and 27 % at 275 K and 100 K، respectively which are suitable for magnetic field sensing applications. The magneto-transport properties of La0. 7 (Sr1-x Bax) MnO3 nanomanganite are described in terms of spin dependent scattering of charge carriers from grain boundaries and their spin dependent tunneling between grains.