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Cites:

Information Journal Paper

Title

APPLICATION OF QUANTUM CORRECTED MONTE CARLO METHOD FOR A RESONANT TUNNELING DIODE

Pages

  109-113

Keywords

Not Registered.

Abstract

 The boltzmann Transport Equation (BTE) is the basic differential equation used for simulation of semiconductor devices. BTE is a semiclassical equation that doesn't include quantum effects. Using the Wigner transport equation, a correction to BTE can be obtained that includes quantum effects. In this paper, the Monte Carlo method was used for solving quantum corrected BTE for a Resonant Tunneling Diode (RTD). As expected, a negative resistance in the current- voltage curve was observed. To obtain a deep insight into such behavior, the current-voltage curve was divided into three regions. In each region the effects of electrostatic potential, effective potential and carrier density variations on the current- voltage curve were studied.

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  • Cite

    APA: Copy

    POUR FATH, M., & FAEZ, R.. (2007). APPLICATION OF QUANTUM CORRECTED MONTE CARLO METHOD FOR A RESONANT TUNNELING DIODE. INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING), 23(38), 109-113. SID. https://sid.ir/paper/107753/en

    Vancouver: Copy

    POUR FATH M., FAEZ R.. APPLICATION OF QUANTUM CORRECTED MONTE CARLO METHOD FOR A RESONANT TUNNELING DIODE. INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING)[Internet]. 2007;23(38):109-113. Available from: https://sid.ir/paper/107753/en

    IEEE: Copy

    M. POUR FATH, and R. FAEZ, “APPLICATION OF QUANTUM CORRECTED MONTE CARLO METHOD FOR A RESONANT TUNNELING DIODE,” INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING), vol. 23, no. 38, pp. 109–113, 2007, [Online]. Available: https://sid.ir/paper/107753/en

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