THE INFLUENCE OF CESIUM ON THE GROWTH OF ULTRA THIN SILICON OXIDE LAYERS

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BAHARI ALI

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Journal Paper

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Journal: IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING Year:2008 | Volume:- | Issue:4 Page(s): 79-86

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Information Journal Paper

Title

THE INFLUENCE OF CESIUM ON THE GROWTH OF ULTRA THIN SILICON OXIDE LAYERS

Author(s)

BAHARI ALI | Issue Writer Certificate

Keywords

THIN FILMQ3

OXIDATION OF SILICONQ4

CESIUMQ4

OPTICAL SECOND HARMONIC GENERATION (OSHG)Q4

OXIDEQ4

INTERFACE STRUCTURESQ3

Abstract

With respect to its configuration and its electronic properties and dynamics, the absorption of Cs on clean Si surface is well characterized in a number of reports.The present procedure was devised to directly control the growth of ultra thin OXIDE on Si surfaces and grow a higher OXIDE thickness with the assistance of Cs at room temperature. It was also found that Cs atoms influenced the electronic structure of the ultra thin OXIDE.

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APA: Copy

BAHARI, ALI. (2008). THE INFLUENCE OF CESIUM ON THE GROWTH OF ULTRA THIN SILICON OXIDE LAYERS. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, -(4), 79-86. SID. https://sid.ir/paper/120952/en

Vancouver: Copy

BAHARI ALI. THE INFLUENCE OF CESIUM ON THE GROWTH OF ULTRA THIN SILICON OXIDE LAYERS. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING[Internet]. 2008;-(4):79-86. Available from: https://sid.ir/paper/120952/en

IEEE: Copy

ALI BAHARI, “THE INFLUENCE OF CESIUM ON THE GROWTH OF ULTRA THIN SILICON OXIDE LAYERS,” IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, vol. -, no. 4, pp. 79–86, 2008, [Online]. Available: https://sid.ir/paper/120952/en

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