DESIGN OF A NEW LOW POWER XOR-XNOR CIRCUIT WITH IMPROVED NOISE IMMUNITY

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ATTAR V.; GHEZELAYAGH M.H.; MIRI A.M.

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Paper Information

Journal: Advanced Defense Science and Technology Year:2012 | Volume:3 | Issue:2 (8) Page(s): 95-101

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Title

DESIGN OF A NEW LOW POWER XOR-XNOR CIRCUIT WITH IMPROVED NOISE IMMUNITY

Author(s)

ATTAR V. | GHEZELAYAGH M.H. | MIRI A.M. | Issue Writer Certificate

Keywords

XOR-XNOR GATESQ3

PDPQ3

NOISE IMMUNITYQ3

Abstract

Due to the main role of XOR-XNOR GATES as the building blocks of many basic arithmetic circuits such as multiplexers, full adders, compressors etc, new methods of improving the speed and power consumption performance has been reported. As the dimensions have been reduced to deep submicron scale, NOISE IMMUNITY has also become an important parameter along with speed, power consumption and size. Herein, the functional properties of a number of these XORXNOR gates are compared and a new low power XOR-XNOR GATES with improved NOISE IMMUNITY XOR-XNOR GATES using 10 transistors is proposed. In passive defense issues, the immunity to electromagnetic disturbances is of paramount importance. Therefore increasing the circuits’ immunity to noise will help the circuits’ function properly against electromagnetic disturbances. The simulation results with 0.18 (mm) technology in an Hspice software for all supply ranges from 0.6 (V) to 3.3 (V) has shown that the new proposed circuit has lower power consumption, an improved PDP with better NOISE IMMUNITY compared to the previous reported circuits.

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APA: Copy

ATTAR, V., GHEZELAYAGH, M.H., & MIRI, A.M.. (2012). DESIGN OF A NEW LOW POWER XOR-XNOR CIRCUIT WITH IMPROVED NOISE IMMUNITY. (JOURNAL OF ADVANCED DEFENCE SCIENCE AND TECHNOLOGY) JOURNAL OF PASSIVE DEFENCE SCIENCE AND TECHNOLOGY, 3(2 (8)), 95-101. SID. https://sid.ir/paper/167329/en

Vancouver: Copy

ATTAR V., GHEZELAYAGH M.H., MIRI A.M.. DESIGN OF A NEW LOW POWER XOR-XNOR CIRCUIT WITH IMPROVED NOISE IMMUNITY. (JOURNAL OF ADVANCED DEFENCE SCIENCE AND TECHNOLOGY) JOURNAL OF PASSIVE DEFENCE SCIENCE AND TECHNOLOGY[Internet]. 2012;3(2 (8)):95-101. Available from: https://sid.ir/paper/167329/en

IEEE: Copy

V. ATTAR, M.H. GHEZELAYAGH, and A.M. MIRI, “DESIGN OF A NEW LOW POWER XOR-XNOR CIRCUIT WITH IMPROVED NOISE IMMUNITY,” (JOURNAL OF ADVANCED DEFENCE SCIENCE AND TECHNOLOGY) JOURNAL OF PASSIVE DEFENCE SCIENCE AND TECHNOLOGY, vol. 3, no. 2 (8), pp. 95–101, 2012, [Online]. Available: https://sid.ir/paper/167329/en

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