Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate

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VADIZADEH M.; GHOREISHI SEYED SALEH; fallahnejad mohammad

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Journal: NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ Year:2020 | Volume:2 | Issue:2 Page(s): 67-72

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Title

Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate

Author(s)

VADIZADEH M. | GHOREISHI SEYED SALEH | fallahnejad mohammad | Issue Writer Certificate

Keywords

Silicon on insulator junctionless FETQ1

intrinsic gate delayQ1

subthereshold slopeQ1

auxiliary gateQ1

ON-state to OFF-state current ratioQ1

Abstract

Silicon on insulator junctionless field effect transistor (SOI-JLFET) includes a single type doping at the same level in the source, channel, and drain regions. Therefore, its fabrication process is easier than inversion mode SOI-FET. However, SOI-JLFET suffers from high subthreshold slope (SS) as well as high leakage current. As a result, the SOI-JLFET device has limitation for high speed and low power applications. For the first time in this study, use of the auxiliary gate in the drain region of the SOI-JLFET has been proposed to improve the both SS and leakage current parameters. The proposed structure is called "SOI-JLFET Aug". The optimal selection for the auxiliary gate work function and its length, has improved the both SS and ION/IOFF ratio parameters, as compared to Regular SOI-JLFET. Simulation results show that, SOI-JLFET Aug with 20nm channel length exhibits the SS~71mV/dec and ION/IOFF~1013. SS and ON-state to OFF-state current (ION/IOFF) ratio of SOI-JLFET Aug are improved by 14% and three orders of magnitudes, respectively, as compared to the Regular SOI-JLFET. The SOI-JLEFT Aug could be good candidate for digital applications.

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APA: Copy

VADIZADEH, M., GHOREISHI, SEYED SALEH, & fallahnejad, mohammad. (2020). Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ, 18(1 ), 67-72. SID. https://sid.ir/paper/228206/en

Vancouver: Copy

VADIZADEH M., GHOREISHI SEYED SALEH, fallahnejad mohammad. Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ[Internet]. 2020;18(1 ):67-72. Available from: https://sid.ir/paper/228206/en

IEEE: Copy

M. VADIZADEH, SEYED SALEH GHOREISHI, and mohammad fallahnejad, “Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate,” NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ, vol. 18, no. 1 , pp. 67–72, 2020, [Online]. Available: https://sid.ir/paper/228206/en

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