A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

RAZAVI S.M.; ZAHIRI S.H.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ Year:2017 | Volume:15 | Issue:2 Page(s): 137-142

Download Full-Text

Persian Verion

View:

1,463

Download:

Cites:

Information Journal Paper

Title

A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL

Author(s)

RAZAVI S.M. | ZAHIRI S.H. | Issue Writer Certificate

Keywords

DOUBLE RECESSED GATEQ1

N-BURIED LAYERQ1

4H-SIC MESFETQ1

DC TRANS-CONDUCTANCEQ1

SHORT CHANNEL EFFECTSQ2

BREAKDOWN VOLTAGEQ2

Abstract

A new structure named as source/drain sides-DOUBLE RECESSED GATE with N-BURIED LAYER in the channel (SDS-DRG) silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is presented in this study. Important parameters such as short channel effect, maximum DC TRANS-CONDUCTANCE, drain current and BREAKDOWN VOLTAGE of the proposed structure are simulated and compared with those of the source side-DOUBLE RECESSED GATE (SS-DRG) and drain side-DOUBLE RECESSED GATE (DS-DRG) 4H-SIC MESFETs. Our simulation results reveal that reducing the channel thickness under the gate at the SDS-DRG structure improves the maximum DC TRANS-CONDUCTANCE and reduces the SHORT CHANNEL EFFECTS compared to SS-DRG and DS-DRG structures. Reducing the channel thickness under the gate at the drain side of the SDS-DRG structure is used to enhance the BREAKDOWN VOLTAGE in comparison with the SS-DRG structure. Also, N-BURIED LAYER with larger doping concentration in the SDS-DRG structure improves the saturated drain current compared to SS-DRG and DS-DRG structures.‏

Cites

No record.

References

No record.

Cite

APA: Copy

RAZAVI, S.M., & ZAHIRI, S.H.. (2017). A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ, 15(2), 137-142. SID. https://sid.ir/paper/228223/en

Vancouver: Copy

RAZAVI S.M., ZAHIRI S.H.. A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ[Internet]. 2017;15(2):137-142. Available from: https://sid.ir/paper/228223/en

IEEE: Copy

S.M. RAZAVI, and S.H. ZAHIRI, “A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL,” NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ, vol. 15, no. 2, pp. 137–142, 2017, [Online]. Available: https://sid.ir/paper/228223/en

Related Journal Papers