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Information Journal Paper

Title

Growth of Standing MoS2 Nanoflakes by Chemical Vapor Deposition

Pages

  49-58

Keywords

chemical vapor deposition (CVD)Q1

Abstract

 Interesting electronic and catalytic properties of two-dimensional MoS2 few-layers have recently attracted the attention of researchers. In this paper, the synthesis of MoS2 nanoflakes standing on the SiO2/Si substrate in the process of rapid sulfidation by chemical vapor deposition has been reported. Material characterization was performed using Raman spectroscopy, XRD and FESEM. The XRD results indicate the dominant phase of 2H-MoS2 and the distance between the two leading peaks of E 1 2g and A1g in the Raman dispersion confirms the thickness of 6 to 10 atomic layers. According to the experimental data, the growth mechanism was introduced based on the nucleation and the growth of two-dimensional islands. In the next stage, it was based on the coalescence of these two-dimensional islands, and in the final stage, it was based on the growth of standing nanoflakes. These structures, which have active sites on the edges, have many potential and promising applications in fine transistors, gas sensors and catalytic reactions.

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  • Cite

    APA: Copy

    BARZEGAR, MARYAM, & irajizad, azam. (2019). Growth of Standing MoS2 Nanoflakes by Chemical Vapor Deposition. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, 9(3 (22) ), 49-58. SID. https://sid.ir/paper/380678/en

    Vancouver: Copy

    BARZEGAR MARYAM, irajizad azam. Growth of Standing MoS2 Nanoflakes by Chemical Vapor Deposition. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS[Internet]. 2019;9(3 (22) ):49-58. Available from: https://sid.ir/paper/380678/en

    IEEE: Copy

    MARYAM BARZEGAR, and azam irajizad, “Growth of Standing MoS2 Nanoflakes by Chemical Vapor Deposition,” JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, vol. 9, no. 3 (22) , pp. 49–58, 2019, [Online]. Available: https://sid.ir/paper/380678/en

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