Information Journal Paper
APA:
CopyVADIZADEH, M.. (2016). IMPROVING GATE DELAY AND ION/IOFF HETROSTRUCTURE FIELD EFFECT DIODE (H-FED) BY USING HEAVY DOPED LAYERS IN THE CHANNEL. JOURNAL OF APPLIED PHYSICS A, 122(4), 460-469. SID. https://sid.ir/paper/709023/en
Vancouver:
CopyVADIZADEH M.. IMPROVING GATE DELAY AND ION/IOFF HETROSTRUCTURE FIELD EFFECT DIODE (H-FED) BY USING HEAVY DOPED LAYERS IN THE CHANNEL. JOURNAL OF APPLIED PHYSICS A[Internet]. 2016;122(4):460-469. Available from: https://sid.ir/paper/709023/en
IEEE:
CopyM. VADIZADEH, “IMPROVING GATE DELAY AND ION/IOFF HETROSTRUCTURE FIELD EFFECT DIODE (H-FED) BY USING HEAVY DOPED LAYERS IN THE CHANNEL,” JOURNAL OF APPLIED PHYSICS A, vol. 122, no. 4, pp. 460–469, 2016, [Online]. Available: https://sid.ir/paper/709023/en