COMPARING AND MODELING STATISTICAL VARIATIONS ON STABILITY OF NANO-TRANSISTORS IN 6T AND 8T SRAM CELLS

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MAHMOODIAN HAMID; Parvizi Mostafa

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Seminar Paper

Paper Information

Seminar: NATIONAL CONFERENCE ON NEW TECHNOLOGIES IN ELECTRICAL AND COMPUTER ENGINEERING
Year:2018 | Issue:1

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Title

COMPARING AND MODELING STATISTICAL VARIATIONS ON STABILITY OF NANO-TRANSISTORS IN 6T AND 8T SRAM CELLS

Author(s)

MAHMOODIAN HAMID | Parvizi Mostafa

Keywords

SRAM

STATIC NOISE MARGIN

SNM

VARIATION

Abstract

HIGH STATISTICAL VARIATION OF STATIC RANDOM ACCESS MEMORY (SRAM) CELL BY NANO-TRANSISTORS IN COMBINATION WITH HIGH DENSITY CAUSES SOME MEMORY PERFORMANCE PROBLEMS.THEREFORE, PRESENTING AN ACCURATE STATISTICAL MODEL IS ONE OF THE KEY ISSUES IN DESIGNING OF SRAM MEMORY. THIS ARTICLE ANALYZES SENSITIVITY OF STATIC NOISE MARGIN (SNM) WITH DIFFERENT STATISTICAL VARIATIONS IN 6-TRANSISTORS (6T) AND 8-TRANSISTORS (8T) SRAM CELLS AND COMPARES STABILITY OF 6T AND 8T SRAM TRANSISTOR CELLS. THIS ARTICLE EXAMINES THE EFFECT OF FOUR SAMPLES OF DIFFERENT VARIATIONS ON THE STATISTICAL STABILITY OF 6T AND 8T CELLS INCLUDING: 1- THRESHOLD VOLTAGE VARIATIONS, 2- SUPPLY VOLTAGE VARIATIONS, 3- VARIATIONS IN WIDTH AND LENGTH OF THE DRIVER TRANSISTORS AND 4- WORD LINE VOLTAGE VARIATIONS. IN ALL THE EXAMINED VARIATIONS, IN 8T SRAM CELL, THE SNM WAS HIGHER THAN THE 6T SRAM CELL.

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APA: Copy

MAHMOODIAN, HAMID, & Parvizi, Mostafa. (2018). COMPARING AND MODELING STATISTICAL VARIATIONS ON STABILITY OF NANO-TRANSISTORS IN 6T AND 8T SRAM CELLS. NATIONAL CONFERENCE ON NEW TECHNOLOGIES IN ELECTRICAL AND COMPUTER ENGINEERING. SID. https://sid.ir/paper/948955/en

Vancouver: Copy

MAHMOODIAN HAMID, Parvizi Mostafa. COMPARING AND MODELING STATISTICAL VARIATIONS ON STABILITY OF NANO-TRANSISTORS IN 6T AND 8T SRAM CELLS. 2018. Available from: https://sid.ir/paper/948955/en

IEEE: Copy

HAMID MAHMOODIAN, and Mostafa Parvizi, “COMPARING AND MODELING STATISTICAL VARIATIONS ON STABILITY OF NANO-TRANSISTORS IN 6T AND 8T SRAM CELLS,” presented at the NATIONAL CONFERENCE ON NEW TECHNOLOGIES IN ELECTRICAL AND COMPUTER ENGINEERING. 2018, [Online]. Available: https://sid.ir/paper/948955/en

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