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Information Journal Paper

Title

THE ELECTRON STOPPER LAYER EFFECT ON LONG-WAVELENGTH VCSEL WITH ASSB-BASED DBR TEMPERATURE DISTRIBUTION

Pages

  25-38

Abstract

 In this study, we have theoretically investigated the effect of ELECTRON STOPPER LAYER on internal TEMPERATURE DISTRIBUTION of high performance vertical cavity surface-emitting laser emitting at 1305 nm. Simulation software PICS3D, which selfconsistently combines the 3D simulation of carrier transport, self-heating, gain computation and wave-guiding, was used. Simulation results show that change the ELECTRON STOPPER LAYER properties affect the internal TEMPERATURE DISTRIBUTION of the device. The temperature of the active region increases compared with the original device. Comparison of TEMPERATURE DISTRIBUTION in devices with different ELECTRON STOPPER LAYER confirms that optimized structure operates at maximum temperature.

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    APA: Copy

    DANESH KAFTROUDDI, ZAHRA, & RAJAEI, ESFANDIAR. (2017). THE ELECTRON STOPPER LAYER EFFECT ON LONG-WAVELENGTH VCSEL WITH ASSB-BASED DBR TEMPERATURE DISTRIBUTION. INTERNATIONAL JOURNAL OF OPTICS AND PHOTONICS (IJOP), 11(1), 25-38. SID. https://sid.ir/paper/307237/en

    Vancouver: Copy

    DANESH KAFTROUDDI ZAHRA, RAJAEI ESFANDIAR. THE ELECTRON STOPPER LAYER EFFECT ON LONG-WAVELENGTH VCSEL WITH ASSB-BASED DBR TEMPERATURE DISTRIBUTION. INTERNATIONAL JOURNAL OF OPTICS AND PHOTONICS (IJOP)[Internet]. 2017;11(1):25-38. Available from: https://sid.ir/paper/307237/en

    IEEE: Copy

    ZAHRA DANESH KAFTROUDDI, and ESFANDIAR RAJAEI, “THE ELECTRON STOPPER LAYER EFFECT ON LONG-WAVELENGTH VCSEL WITH ASSB-BASED DBR TEMPERATURE DISTRIBUTION,” INTERNATIONAL JOURNAL OF OPTICS AND PHOTONICS (IJOP), vol. 11, no. 1, pp. 25–38, 2017, [Online]. Available: https://sid.ir/paper/307237/en

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