COMPUTATIONAL STUDIES OF PLANAR, TUBULAR AND CONICAL FORMS OF SILICON NANOSTRUCTURES

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

RAHIMNEJAD S.; MIRZAEI M.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: International Journal of Nano Dimension Year:2011 | Volume:1 | Issue:4 Page(s): 257-260

Download Full-Text

View:

372

Download:

101

Cites:

Information Journal Paper

Title

COMPUTATIONAL STUDIES OF PLANAR, TUBULAR AND CONICAL FORMS OF SILICON NANOSTRUCTURES

Author(s)

RAHIMNEJAD S. | MIRZAEI M. | Issue Writer Certificate

Keywords

SILICON

NANOSTRUCTURE

DENSITY FUNCTIONAL THEORY (DFT)

NANOSHEET

NANOTUBE

NANOCONE

Abstract

Density functional theory (DFT) calculations were performed to investigate the properties of planar, tubular and conical forms of SILICON NANOSTRUCTUREs. The evaluated parameters including averaged bond lengths, binding energies, gap energies and dipole moments were then evaluated for the optimized models of study. The results indicated that the bond lengths between SILICON atoms are different in the three forms of structures. The binding energies indicated that the planar form could be considered as the most stable form of SILICON NANOSTRUCTUREs among the investigated forms. Better conductivity of the conical form than the tubular and planar forms was confirmed by the gap energies. The dipole moments indicated that the planar and tubular forms of SILICON NANOSTRUCTUREs are non-polar whereas the conical form is a polar SILICON NANOSTRUCTURE.

Cites

RELAXATIONS OF METHYLPYRIDINONE TAUTOMERS AT THE C60 SURFACES: DFT STUDIES

References

Cite

APA: Copy

RAHIMNEJAD, S., & MIRZAEI, M.. (2011). COMPUTATIONAL STUDIES OF PLANAR, TUBULAR AND CONICAL FORMS OF SILICON NANOSTRUCTURES. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), 1(4), 257-260. SID. https://sid.ir/paper/322080/en

Vancouver: Copy

RAHIMNEJAD S., MIRZAEI M.. COMPUTATIONAL STUDIES OF PLANAR, TUBULAR AND CONICAL FORMS OF SILICON NANOSTRUCTURES. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND)[Internet]. 2011;1(4):257-260. Available from: https://sid.ir/paper/322080/en

IEEE: Copy

S. RAHIMNEJAD, and M. MIRZAEI, “COMPUTATIONAL STUDIES OF PLANAR, TUBULAR AND CONICAL FORMS OF SILICON NANOSTRUCTURES,” INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), vol. 1, no. 4, pp. 257–260, 2011, [Online]. Available: https://sid.ir/paper/322080/en

Related Journal Papers

No record.

Related Seminar Papers

No record.

Related Plans

No record.

Recommended Workshops