A STUDY ON THE DEPENDENCE OF DC ELECTRICAL PROPERTIES AND NANOSTRUCTURE OF CU THIN FILMS ON FILM THICKNESS

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KHOJIER K.; SAVALONI H.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: International Journal of Nano Dimension Year:2013 | Volume:3 | Issue:3 (11) Page(s): 217-226

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Title

A STUDY ON THE DEPENDENCE OF DC ELECTRICAL PROPERTIES AND NANOSTRUCTURE OF CU THIN FILMS ON FILM THICKNESS

Author(s)

KHOJIER K. | SAVALONI H. | Issue Writer Certificate

Keywords

THIN FILM

COPPER

THICKNESS

NANOSTRUCTURE

RESISTIVITY

CONCENTRATION OF CARRIERS

Abstract

This paper reports the correlation between film THICKNESS, NANOSTRUCTURE and DC electrical properties of COPPER THIN FILMs deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. RESISTIVITY was measured by four point probe instrument, while a Hall effects measurement system was employed for Hall Effect analysis. The grain size calculated from XRD and AFM, roughness, RESISTIVITY, hall coefficient, carrier concentration and mobility were plotted as a function of THICKNESS. The result showed amorphous structure for 20 nm THICKNESS, but with increasing the film THICKNESS, Cu (111) preferred orientation was observed. The grain size, roughness and CONCENTRATION OF CARRIERS increased and RESISTIVITY, hall coefficient and mobility decreased with increasing the film THICKNESS. The result of COPPER THIN FILMs electrical investigation showed the value of RESISTIVITY and concentrations of carriers come to bulk state value at approximately 160 nm THICKNESS.

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References

OPTICAL PROPERTIES OF THIN CU FILMS AS A FUNCTION OF SUBSTRATE TEMPERATURE

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APA: Copy

KHOJIER, K., & SAVALONI, H.. (2013). A STUDY ON THE DEPENDENCE OF DC ELECTRICAL PROPERTIES AND NANOSTRUCTURE OF CU THIN FILMS ON FILM THICKNESS. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), 3(3 (11)), 217-226. SID. https://sid.ir/paper/322188/en

Vancouver: Copy

KHOJIER K., SAVALONI H.. A STUDY ON THE DEPENDENCE OF DC ELECTRICAL PROPERTIES AND NANOSTRUCTURE OF CU THIN FILMS ON FILM THICKNESS. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND)[Internet]. 2013;3(3 (11)):217-226. Available from: https://sid.ir/paper/322188/en

IEEE: Copy

K. KHOJIER, and H. SAVALONI, “A STUDY ON THE DEPENDENCE OF DC ELECTRICAL PROPERTIES AND NANOSTRUCTURE OF CU THIN FILMS ON FILM THICKNESS,” INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), vol. 3, no. 3 (11), pp. 217–226, 2013, [Online]. Available: https://sid.ir/paper/322188/en

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