مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

video

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

sound

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Persian Version

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View:

317
مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Download:

74
مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Cites:

Information Journal Paper

Title

TIME-DEPENDENT ANALYSIS OF CARRIER DENSITY AND POTENTIAL ENERGY IN SPHERICAL CENTERED DEFECT IN GAAS/ALGAAS QUANTUM DOT (SCDQD)

Pages

  35-42

Abstract

 Interaction and correlation effects in QUANTUM DOTs play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the NUMERICAL CALCULATION of quantum transport of electrons in spherical centered defect In GaAs/AlGaAs QUANTUM DOT (SCDQD). The simulation is based on the imaginary time solution of time-dependent Schrodinger equation, under effective mass approximation by using FINITE DIFFERENCE METHOD. The SELF-CONSISTENT properties of the system solution of the time-dependent Schrodinger coupled with poisson equations have been SELF-CONSISTENTly solved and the Hartree and exchange-correlation potentials as well as the penetration of wave function in the barrier regions have been calculated. Electron density and potential energy are calculated in SCDQD. The interaction between the charge carriers and corresponding barriers causes the more drastic repulsion of charge carriers from the infinite wall than the barriers within the structure. The oscillatory structures in the active region are caused by the quantum effect of tunneling and depletion near the barriers.

Cites

  • No record.
  • References

  • No record.
  • Cite

    APA: Copy

    HOSEINKHANI, H., TALEBIAN DARZI, M.A., ABDOLLAHI, M., & SABBAGHI, S.. (2012). TIME-DEPENDENT ANALYSIS OF CARRIER DENSITY AND POTENTIAL ENERGY IN SPHERICAL CENTERED DEFECT IN GAAS/ALGAAS QUANTUM DOT (SCDQD). INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), 3(1 (9)), 35-42. SID. https://sid.ir/paper/322109/en

    Vancouver: Copy

    HOSEINKHANI H., TALEBIAN DARZI M.A., ABDOLLAHI M., SABBAGHI S.. TIME-DEPENDENT ANALYSIS OF CARRIER DENSITY AND POTENTIAL ENERGY IN SPHERICAL CENTERED DEFECT IN GAAS/ALGAAS QUANTUM DOT (SCDQD). INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND)[Internet]. 2012;3(1 (9)):35-42. Available from: https://sid.ir/paper/322109/en

    IEEE: Copy

    H. HOSEINKHANI, M.A. TALEBIAN DARZI, M. ABDOLLAHI, and S. SABBAGHI, “TIME-DEPENDENT ANALYSIS OF CARRIER DENSITY AND POTENTIAL ENERGY IN SPHERICAL CENTERED DEFECT IN GAAS/ALGAAS QUANTUM DOT (SCDQD),” INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), vol. 3, no. 1 (9), pp. 35–42, 2012, [Online]. Available: https://sid.ir/paper/322109/en

    Related Journal Papers

  • No record.
  • Related Seminar Papers

  • No record.
  • Related Plans

  • No record.
  • Recommended Workshops






    Move to top
    telegram sharing button
    whatsapp sharing button
    linkedin sharing button
    twitter sharing button
    email sharing button
    email sharing button
    email sharing button
    sharethis sharing button