Design, simulation and analysis of high-K gate dielectric FinField effect transistor

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

Aditya Marupaka; Rao Karumuri Srinivasa; Sravani KondaviteeGirija; Guha Koushik

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: International Journal of Nano Dimension Year:2021 | Volume:12 | Issue:3 Page(s): 305-309

Download Full-Text

View:

Download:

Cites:

Information Journal Paper

Title

Design, simulation and analysis of high-K gate dielectric FinField effect transistor

Author(s)

Aditya Marupaka | Rao Karumuri Srinivasa | Sravani KondaviteeGirija | Guha Koushik | Issue Writer Certificate

Keywords

FinFET

Hafnium Oxide

High-K Dielectric

Subthreshold Slope

Transconductance

Abstract

The devices with additional gates like Fin Field effect transistor (FinFET) provide higher control on subthreshold parameters and are favorable for Ultra large-scale integration. Also, these structures provide high control on current through the channel and with minimum leakage. In this paper we designed a FinFET with high-K gate dielectric material i. e Hafnium Oxide as gate oxide. A comparison of similar sized transistor with Air and Silicon dioxide as gate material is performed. The comparison is mainly in terms of performance parameters like Transconductance, Subthreshold Slope, and drain current characteristics. There is an increase in ON current on using a High-K Dielectric material and subsequently an improvement in other parameters like Subthreshold Slope, Transconductance and intrinsic gain.

Cites

No record.

References

No record.

Cite

APA: Copy

Aditya, Marupaka, Rao, Karumuri Srinivasa, & Guha, Koushik. (2021). Design, simulation and analysis of high-K gate dielectric FinField effect transistor. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), 12(3), 305-309. SID. https://sid.ir/paper/997839/en

Vancouver: Copy

Aditya Marupaka, Rao Karumuri Srinivasa, Guha Koushik. Design, simulation and analysis of high-K gate dielectric FinField effect transistor. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND)[Internet]. 2021;12(3):305-309. Available from: https://sid.ir/paper/997839/en

IEEE: Copy

Marupaka Aditya, Karumuri Srinivasa Rao, and Koushik Guha, “Design, simulation and analysis of high-K gate dielectric FinField effect transistor,” INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), vol. 12, no. 3, pp. 305–309, 2021, [Online]. Available: https://sid.ir/paper/997839/en

Related Journal Papers

No record.

Related Seminar Papers

No record.

Related Plans

No record.

Recommended Workshops